Brand: SK Hynix | Category: Memory (RAM)
SKU: SKHY-HBM3E12H36GB | Part #: HBM3E-12H-36GB | MPN: HBM3E-12H-36GB
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The SK Hynix HBM3E 12-Hi 36GB Memory Stack represents a landmark advancement in high-bandwidth memory architecture, becoming the world's first 12-layer HBM3E device to enter mass production as of Q1 2025. By stacking twelve DRAM dies using Through-Silicon Via (TSV) interconnect technology, SK Hynix achieves a 36GB per-stack capacity that directly addresses the exponentially growing memory footprint demands of large language models, generative AI inference engines, and scientific simulation workloads. The 12-Hi configuration surpasses the previous 8-Hi standard, delivering a 50% increase in per-stack capacity without sacrificing the ultra-wide 1024-bit memory bus that defines the HBM standard.
Operating within the HBM3E specification, each stack delivers a peak bandwidth of 1.28 TB/s, enabled by an internal data rate of 9.6 Gbps per pin across the 1024-bit interface. Advanced MR-MUF (Mass Reflow Molded Underfill) packaging technology ensures structural integrity across all twelve die layers while maintaining optimal thermal dissipation characteristics critical for sustained operation inside thermally dense AI accelerator packages. The memory controller interface is fully compliant with JEDEC HBM3E standards, ensuring interoperability with next-generation GPU and AI ASIC silicon from leading semiconductor vendors.
From a system integration perspective, the HBM3E 12-Hi stack is designed for 2.5D integration via silicon interposer alongside compute dies in advanced multi-chip module assemblies. The elevated per-stack capacity means fewer stacks are required to achieve a given total memory configuration, which translates to improved power efficiency per gigabyte and reduced interposer real estate. These characteristics make it an ideal memory solution for training clusters running foundation models with hundreds of billions of parameters, as well as high-throughput inference platforms where memory capacity and bandwidth are co-critical constraints.
| Manufacturer | SK Hynix |
| Product Family | HBM3E 12-Hi |
| Capacity per Stack | 36 GB |
| Memory Standard | JEDEC HBM3E |
| Stack Configuration | 12-Hi (12 DRAM dies per stack) |
| Memory Bus Width | 1024-bit (per stack) |
| Peak Memory Bandwidth | 1.28 TB/s per stack |
| Data Rate | 9.6 Gbps per pin |
| Die Technology | 1b nm (1-beta) DRAM process node |
| Interconnect Technology | Through-Silicon Via (TSV) |
| Packaging Technology | MR-MUF (Mass Reflow Molded Underfill) |
| Integration Method | 2.5D silicon interposer (CoWoS / similar advanced packaging) |
| Interface Compliance | JEDEC HBM3E standard |
| Operating Voltage (VDD) | 1.05 V (nominal) |
| ECC Support | On-die ECC (ODECC) with advanced correction |
| Thermal Design | Optimized for sustained operation within AI accelerator thermal envelopes |
| Target Applications | AI accelerators, next-generation GPUs, HPC compute nodes |
| Production Status | Mass production (Q1 2025) |
| Per-Stack Power Efficiency | Improved TB/s per watt versus 8-Hi HBM3E baseline |
| Stacked Die Count vs. Previous Gen | 12 layers vs. 8 layers (50% increase in capacity per stack) |
| Form Factor | HBM3E standard footprint for interposer-based multi-chip module integration |
Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.
| Brand | SK Hynix |
| Category | Memory (RAM) |
| SKU | SKHY-HBM3E12H36GB |
| Part Number | HBM3E-12H-36GB |
| Condition | New |
| Product Family | HBM3E 12-Hi |
| Capacity per Stack | 36 GB |
| Memory Standard | JEDEC HBM3E |
| Stack Configuration | 12-Hi (12 DRAM dies per stack) |
| Memory Bus Width | 1024-bit (per stack) |
| Peak Memory Bandwidth | 1.28 TB/s per stack |
| Data Rate | 9.6 Gbps per pin |
| Die Technology | 1b nm (1-beta) DRAM process node |
| Interconnect Technology | Through-Silicon Via (TSV) |
| Packaging Technology | MR-MUF (Mass Reflow Molded Underfill) |
| Integration Method | 2.5D silicon interposer (CoWoS / similar advanced packaging) |
| Interface Compliance | JEDEC HBM3E standard |
| Operating Voltage (VDD) | 1.05 V (nominal) |
| ECC Support | On-die ECC (ODECC) with advanced correction |
| Thermal Design | Optimized for sustained operation within AI accelerator thermal envelopes |
| Target Applications | AI accelerators, next-generation GPUs, HPC compute nodes |
| Production Status | Mass production (Q1 2025) |
| Per-Stack Power Efficiency | Improved TB/s per watt versus 8-Hi HBM3E baseline |
| Stacked Die Count vs. Previous Gen | 12 layers vs. 8 layers (50% increase in capacity per stack) |
| Form Factor | HBM3E standard footprint for interposer-based multi-chip module integration |
The SK Hynix HBM3E 12-Hi 36GB Memory Stack is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. SK Hynix validates this module against major server vendor compatibility matrices.
Key specifications for the SK Hynix HBM3E 12-Hi 36GB Memory Stack: new condition; manufacturer SK Hynix; product family HBM3E 12-Hi; capacity per stack 36 GB; memory standard JEDEC HBM3E; stack configuration 12-Hi (12 DRAM dies per stack); memory bus width 1024-bit (per stack). Manufacturer part number HBM3E-12H-36GB. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.