Samsung 16GB DDR5 RDIMM M321R2GA3EB0-CWM

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M321R2GA3EB0CWM | Part #: M321R2GA3EB0-CWM | MPN: M321R2GA3EB0-CWM

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Samsung's M321R2GA3EB0-CWM represents the kind of memory module that appears in production data centre racks when latency matters more than raw capacity. At CAS latency 46 with a 1.1 V operating voltage, this 16 GB DDR5 RDIMM sits at the intersection of speed and stability—the exact combination required by applications where microseconds compound into lost trades, failed queries, or missed SLA windows. The module operates at DDR5-5600 (PC5-44800), delivering 5600 Mbps throughput across its 288-pin interface. Samsung engineered this part with on-die ECC at the DRAM component level, meaning error detection and correction happen without consuming additional module real estate or adding latency overhead that would defeat the purpose of the aggressive clock speed. For storage architects, infrastructure engineers, and data centre operations teams sourcing memory for in-memory databases, HPC clusters, or financial services workloads, the M321R2GA3EB0-CWM is a module you specify when your application's performance profile demands this particular balance.

The DDR5 generation shifted the fundamental economics of server memory. Where DDR4 left capacity and speed in tension—you could have one or the other, rarely both—DDR5 architectures like this Samsung RDIMM begin resolving that constraint. The 16 GB capacity per module, paired with DDR5-5600 speeds, means a dual-socket server populated with eight of these modules reaches 128 GB of memory bandwidth that was unavailable in the previous generation. The low-profile form factor (31.25 mm in height) also matters in dense deployments: 2U systems that pack 24 DIMM slots benefit from the reduced thermal stack and improved airflow that comes with abbreviated module heights. Samsung's implementation here uses JEDEC-compliant DDR5 RDIMM architecture, which means you are not buying into a vendor-specific performance envelope. Registered DIMMs isolate the memory bus through a register layer, reducing electrical load on the processor's memory controller—this is why every serious server deployment in production uses RDIMMs, not UDIMMs. The M321R2GA3EB0-CWM extends Samsung's track record of reliability in registered memory, a category where Samsung holds significant market share across OEM and aftermarket channels throughout the GCC region and Asia.

Thermal and voltage profiles matter more in hyperscale than marketing does. Operating across 0°C to 85°C, the M321R2GA3EB0-CWM accommodates the environment of most modern data centres—whether ambient-cooled or liquid-cooled. The 1.1 V specification is standard for DDR5, but that number matters when you are calculating power budgets for a rack of 40 servers. At eight modules per socket and two sockets per server, one populated rack can contain up to 640 of these DIMMs in a 42U frame. At 1.1 V per module, power draw scales predictably, and Samsung's manufacturing process—which this part reflects—has historically delivered stable voltage delivery and low leakage current. The Serial Presence Detect (SPD) via I3C interface means the memory controller can negotiate timings dynamically during POST, reducing the need for manual BIOS configuration in mixed-generation deployments. This matters for infrastructure teams running refresh cycles where new and older memory generations coexist temporarily on the same systems. Error correction at the on-die DRAM level adds another layer of resilience: single-bit errors are corrected transparently, and multi-bit errors are detected before they propagate to application code. For financial trading systems, medical imaging platforms, and AI training workloads, this combination of speed and reliability is non-negotiable.

The M321R2GA3EB0-CWM also addresses a specific gap in the DDR5 ecosystem that has become apparent over the past 18 months. Early DDR5 modules came in lower-frequency variants (4800 Mbps, 5200 Mbps) that felt conservative to engineers accustomed to the maturity of DDR4-3200 and DDR4-3600. The 5600 Mbps speed point on this Samsung module represents the inflection where DDR5's architectural advantages (larger cache hierarchies, lower latency at the controller, improved prefetch) deliver measurable real-world gains in bandwidth-limited applications. Database administrators running columnar data stores, AI infrastructure teams running transformer inference, and network engineers building in-memory caching layers all report tangible performance improvements when they move from DDR4 to DDR5-5600. This is not theoretical improvement—it appears in application-level benchmarks. The M321R2GA3EB0-CWM carries Samsung's part number designation, which means it is a purpose-built component for server OEMs and is not a consumer-binned module rebranded for enterprise. The manufacturing quality control, the SPD programming, and the memory cell selection are all calibrated to server-class standards. If your supply chain brings in memory from grey-market channels or consumer channels, you are accepting risk that does not exist with a directly sourced Samsung server-grade RDIMM like this one.

Omnixon Global sources and supplies the Samsung M321R2GA3EB0-CWM and allied server memory components across the GCC, Asia, and European markets. We maintain direct relationships with Samsung's distribution network and hold stock in warehouses positioned for rapid delivery to data centre operators, system integrators, and enterprise IT teams across the UAE, Saudi Arabia, Kuwait, and beyond. Whether you are building a new in-memory database cluster, refreshing memory in an existing HPC platform, or sourcing replacement RDIMMs for production servers, we can support single-module RFQs or pallets. Request a quotation through our enterprise channel, and our technical sales team will confirm availability, pricing, and lead times specific to your deployment timeline and regional requirements.

Performance Specifications and Server Integration Profile

• DDR5-5600 (PC5-44800) interface with 5600 Mbps data transfer rate, delivering measurable bandwidth improvements in latency-sensitive and memory-intensive workloads
• CAS latency CL46 with 1.1 V operating voltage, optimized for in-memory databases, high-frequency trading systems, and real-time analytics platforms
• 16 GB capacity per RDIMM with low-profile 31.25 mm form factor, supporting dense 2U and 1U server configurations without thermal or airflow compromise
• On-die ECC at DRAM component level with Registered DIMM architecture, isolating memory bus load and providing transparent single-bit error correction
• JEDEC DDR5 RDIMM standard compliance with SPD via I3C interface, enabling dynamic timing negotiation and simplified multi-generation memory coexistence in refresh cycles
• 288-pin socket interface rated 0°C to 85°C operating temperature, suitable for ambient-cooled, in-row, and liquid-cooled data centre environments
• Samsung manufacturing quality control and server-class component binning, ensuring stable production performance across high-density rack deployments