Brand: Samsung | Category: Memory (RAM)
SKU: SAM-M386AAG40BM3CWE | Part #: M386AAG40BM3-CWE | MPN: M386AAG40BM3-CWE
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A single server equipped with the Samsung 128GB DDR4 LRDIMM M386AAG40BM3-CWE can hold up to 18 modules, delivering 2.3 TB of total system memory. For infrastructure architects provisioning data centres across the GCC or scaling AI training clusters, this capacity ceiling matters immediately—it determines whether your next generation of workloads runs on existing socket counts or forces a redesign. The M386AAG40BM3-CWE addresses that constraint by packing 128 GB into a single DIMM without sacrificing the stability or load distribution that enterprise operations demand.
Samsung engineered this module around three-dimensional stacking (3DS), which vertically integrates memory cells to reach 128 GB on a single physical DIMM while keeping electrical load predictable and power consumption modest. Operating at 3200 MT/s with a CAS latency of CL22, the M386AAG40BM3-CWE delivers the throughput required for large-scale analytics, machine learning inference, and transactional databases without the latency penalties that larger capacity modules sometimes incur. The 1.2 V operating voltage sits at the JEDEC standard for DDR4, meaning power budgets remain aligned with infrastructure designs built on Samsung reference specifications across the past six years.
The load-reduced DIMM (LRDIMM) architecture is what separates this from consumer-grade or smaller-capacity server memory. A systems architect choosing between RDIMM, UDIMM, and LRDIMM is making a bet on population density versus electrical complexity. LRDIMMs scatter signal buffering across the module itself, allowing motherboards to support higher module counts without degrading timing margins. In practice, this means the M386AAG40BM3-CWE runs stably in 18-slot configurations where an unbuffered DIMM would force frequency derating or reduced module counts. For data centre operators in the UAE, Saudi Arabia, or across Asia-Pacific, this translates to denser memory per rack unit and lower cost-per-gigabyte amortization across the infrastructure lifecycle.
Samsung equipped the M386AAG40BM3-CWE with eight ranks per module (8Rx4 configuration), a layout that requires intelligent refresh cycling and platform-level coordination but unlocks the electrical efficiency that makes 128 GB per DIMM feasible at standard voltages. ECC error correction is native to the design—no exceptions, no variants. Any organization deploying these modules is explicitly opting for memory fault tolerance; silent data corruption is not an acceptable failure mode in AI labs, financial data centres, or cloud platforms. The 288-pin form factor is JEDEC-compliant DDR4, ensuring interoperability across major server OEMs including Dell, HPE, Lenovo, and Supermicro platforms that dominate the region.
Storage and infrastructure teams sourcing Samsung DDR4 LRDIMM inventory need vendors who understand both the technical constraints and the sourcing landscape. Omnixon Global maintains certified stock of the M386AAG40BM3-CWE for immediate shipment across the GCC, India, and Southeast Asia, backed by Samsung's warranty and technical support documentation. Whether you are specifying memory for a hyperscale build-out, refreshing an existing data centre, or validating components for an AI infrastructure tender, we can expedite samples and provide bulk RFQ support tailored to your procurement timeline and deployment architecture.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAM-M386AAG40BM3CWE |
| Part Number | M386AAG40BM3-CWE |
| Condition | New |
| Capacity | 128 GB |
| Form Factor | LRDIMM |
| Speed | 3200 Mbps |
| Manufacturer Part Number | M386AAG40BM3-CWE |
| Capacity | 128 GB |
| Memory Type | DDR4 |
| Module Form Factor | LRDIMM (Load-Reduced DIMM) |
| DIMM Architecture | 3DS (Three-Dimensional Stacked) |
| Speed Grade | DDR4-3200 |
| PC Speed Rating | PC4-25600 |
| Data Transfer Rate | 3200 MT/s |
| Voltage | 1.2 V |
| Pin Count | 288-pin |
| ECC Support | Yes (ECC) |
| Ranks | 8Rx4 |
| CAS Latency | CL22 |
| Module Width | 64-bit data bus with ECC (72-bit total) |
| Operating Temperature | 0°C to 85°C |
| JEDEC Compliance | JEDEC DDR4 LRDIMM standard |
| RoHS Compliance | RoHS compliant |
The Samsung 128GB DDR4 LRDIMM M386AAG40BM3-CWE is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
Key specifications for the Samsung 128GB DDR4 LRDIMM M386AAG40BM3-CWE: capacity 128 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 128GB; memory speed 3200 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386AAG40BM3-CWE. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.
The Samsung 128GB DDR4 LRDIMM M386AAG40BM3-CWE fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.