Samsung 128GB DDR4 LRDIMM M386AAG40AM3-CWE

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M386AAG40AM3CWE | Part #: M386AAG40AM3-CWE | MPN: M386AAG40AM3-CWE

Contact for Pricing — Request a Quote

This Samsung 128GB DDR4 LRDIMM module—part number M386AAG40AM3-CWE—is engineered specifically for Intel Xeon Scalable processors (Ice Lake and Cooper Lake generations) and validated AMD EPYC platforms that require dense, high-capacity memory configurations at 3200 MT/s. Load-Reduced DIMMs occupy a critical niche in enterprise and data-centre architectures where channel population demands exceed standard RDIMM limits, and the M386AAG40AM3-CWE delivers the capacity density that infrastructure teams need to maximize per-socket memory without sacrificing speed or reliability.

Samsung built this module around quad-rank (4Rx4) architecture with x4 device width, which means the register and buffer layer sits between the DIMM and the memory controller, distributing electrical load across four logical rank groups. That design choice matters because it allows system designers to install up to 12 DIMMs per processor socket on supported platforms—something that would cause signal integrity collapse on an unbuffered dual-rank module. The M386AAG40AM3-CWE operates at 1.2 volts and maintains a CAS latency of 22 cycles, hitting the DDR4-3200 speed grade (PC4-25600) that Intel and AMD certified for their latest Xeon and EPYC generation processors. The 288-pin socket and registered design ensure that any compatible system firmware and microcode recognise the module without firmware tuning.

Storage architects and memory procurement specialists at enterprises with large virtualisation footprints, AI training clusters, and in-memory database workloads typically drive purchasing decisions for this tier of memory. A sysadmin or platform engineer might spec this LRDIMM when they're designing a system that needs 2 TB or more of RAM per node—think Kubernetes cluster control planes backed by etcd clusters, SAP HANA deployments, or distributed ML training frameworks that allocate gigabytes to parameter servers. Because Samsung includes ECC (Error-Correcting Code) functionality, single-bit errors are detected and corrected in real time, and multi-bit errors are flagged to the system log. That matters in production environments where a silent memory corruption bug could propagate through a database transaction or model gradient calculation undetected.

The Samsung M386AAG40AM3-CWE carries RoHS compliance and is rated for continuous operation between 0°C and 85°C ambient, which aligns with typical data-centre inlet and edge-computing temperature bands. The registered design and data buffer also reduce stress on the memory controller itself, which translates to cooler thermals on the processor die and longer mean time between failures (MTBF) in high-utilisation deployments. When you populate multiple DIMMs per channel—say, four LRDIMMs across a dual-socket Xeon Scalable system—the load-reduced architecture prevents the kind of signal reflections and timing skew that would normally force you to dial back frequency or loosen timing margins. This particular Samsung module strikes that balance: it delivers 128 GB of capacity in a single-slot footprint while maintaining rated speed across heavily populated memory configurations.

Omnixon Global stocks the Samsung M386AAG40AM3-CWE and similar enterprise memory modules across our distribution centres in Dubai and partner hubs throughout the GCC and into Asia-Pacific. We support integration into complete server builds, refreshes of existing Xeon and EPYC platforms, and memory upgrades for customers who already have compatible hardware in place. Whether you're planning a multi-node cluster refresh or validating memory options for a new infrastructure project, we can provide technical documentation, compatibility matrices, and stock confirmation in your timezone. Please submit an RFQ through our platform or contact our enterprise sales team directly—we'll work through your Bill of Materials and lead times with the detail and speed that infrastructure projects require.

Performance and Compatibility Specifications

• Capacity: 128 GB per module; quad-rank (4Rx4) design supports up to 12 DIMMs per processor socket on compatible systems
• Speed: DDR4-3200 MT/s (PC4-25600) validated for Intel Xeon Scalable (Ice Lake, Cooper Lake) and select AMD EPYC platforms at rated frequency
• Error Detection and Correction: Full ECC support with single-bit error correction and multi-bit error detection for production reliability
• Load-Reduced Architecture: Data buffer and register layer reduce electrical load on memory controller, enabling higher DIMM population density without timing penalties
• Voltage and Thermal Profile: 1.2 V operation with CAS latency 22; rated for 0–85°C ambient with minimal thermal impact on processor package
• Form Factor and Pin Count: 288-pin LRDIMM with registered interface; standard form factor compatible with 2U and denser rack-mount server designs
• Compliance: RoHS-compliant manufacturing; Samsung part number M386AAG40AM3-CWE carries full OEM validation for Xeon and EPYC ecosystem