Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE

Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M386AAG40EM3CWE | Part #: M386AAG40EM3-CWE | MPN: M386AAG40EM3-CWE

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About the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE

Samsung DDR4-3200 128GB LRDIMM — high-capacity, load-reduced memory delivering 3,200 MT/s throughput for mission-critical server deployments.

The Samsung M386AAG40EM3-CWE is a 128GB DDR4 LRDIMM engineered for large-scale enterprise infrastructure requiring maximum memory density without sacrificing stability. Built on Samsung's advanced 3DS (Three-Dimensional Stacked) DRAM technology, this module operates at DDR4-3200 speeds with full ECC support for single-bit error correction and multi-bit error detection. The 8Rx4 rank configuration and low-profile form factor fit seamlessly into dense server chassis, while the 1.2V operating voltage ensures efficiency across extended temperature ranges (0°C to 85°C). With 288-pin JEDEC compliance and RoHS certification, Samsung's M386AAG40EM3-CWE meets global environmental and compatibility standards. Storage architects and IT procurement teams rely on load-reduced DIMMs to reduce electrical stress on memory controllers, enabling stable operation in systems with 16+ memory slots per processor.

Enterprise Deployment Scenarios

  • High-density virtualization and consolidated hypervisor platforms requiring 2–4TB total system memory
  • Enterprise data warehousing and analytics clusters processing large in-memory datasets
  • Database management systems (SQL Server, Oracle, PostgreSQL) with substantial working sets
  • Cloud infrastructure and multi-tenant environments prioritizing memory scaling and error resilience
  • Scientific computing and simulation workloads demanding stable, high-capacity LRDIMM configurations

Samsung's proven track record in enterprise memory manufacturing ensures long-term reliability and OEM validation across major server platforms. When you're ready to spec or source the M386AAG40EM3-CWE for your infrastructure upgrade, contact Omnixon Global for a detailed RFQ and technical consultation.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAM-M386AAG40EM3CWE
Part NumberM386AAG40EM3-CWE
ConditionNew
Capacity128 GB
Form FactorLRDIMM
Speed3200 Mbps
Manufacturer Part NumberM386AAG40EM3-CWE
Capacity128 GB
Memory TypeDDR4
Module Form FactorLRDIMM (Load-Reduced DIMM)
Speed GradeDDR4-3200
Data Transfer Rate3200 MT/s
Operating Voltage1.2 V
Pin Configuration288-pin
ECC SupportYes
Error CorrectionECC (Single-bit error correction, multi-bit error detection)
DRAM Technology3DS (Three-Dimensional Stacked)
Rank Configuration8Rx4
CAS Latency (CL)22
Module HeightLow Profile (LP)
Operating Temperature0°C to 85°C
RoHS CompliantYes
JEDEC ComplianceJEDEC DDR4 Standard

Frequently Asked Questions about Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE

What does the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE do?

The Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE?

Key specifications for the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE: capacity 128 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 128GB; memory speed 3200 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386AAG40EM3-CWE. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE compatible with my infrastructure?

The Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CWE fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.