Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE
Brand: Samsung | Category: Memory (RAM)
SKU: SAM-M386ABG40B50CWE | Part #: M386ABG40B50-CWE | MPN: M386ABG40B50-CWE
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About the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE
The Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE is engineered for Intel Xeon Scalable and AMD EPYC processors that demand high-density, multi-socket memory configurations. This 288-pin DIMM operates at 3200 MT/s (PC4-25600) with full ECC protection, making it the standard choice for data center architects scaling distributed storage and cloud infrastructure across dual and quad-socket systems.
Samsung designed this module with 4Rx4 rank configuration and 16 Gb die density to maximize memory channels while minimizing electrical loading on the memory bus. At just 1.2 V operating voltage with a 22-cycle CAS latency, the M386ABG40B50-CWE delivers the thermal efficiency and performance consistency required by IT procurement teams and infrastructure engineers managing 24/7 production workloads. Load-reduced architecture ensures signal integrity in densely populated DIMM slots, critical for enterprises consolidating compute resources. Full JEDEC compliance and RoHS certification guarantee compatibility with certified vendor hardware and sustainability compliance across regulated industries.
Enterprise Deployment Scenarios
- Multi-socket Xeon-based database servers requiring 512 GB to 2 TB memory pools for in-memory analytics and transactional workloads
- EPYC-powered virtualization hosts supporting hundreds of concurrent VMs with consistent latency performance
- High-performance computing clusters running parallel processing jobs across distributed memory architectures
- Cloud service provider hyperscale deployments where memory density directly impacts per-rack profitability
- Enterprise data warehousing platforms demanding ECC reliability and sustained 0–85°C thermal operating margins
For competitive pricing, platform-specific configuration guidance, and volume availability, submit your RFQ to Omnixon Global today.
Technical Specifications
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAM-M386ABG40B50CWE |
| Part Number | M386ABG40B50-CWE |
| Condition | New |
| Capacity | 64 GB |
| Form Factor | LRDIMM |
| Speed | 3200 Mbps |
| Manufacturer Part Number | M386ABG40B50-CWE |
| Form Factor | 288-pin DIMM |
| Module Type | LRDIMM (Load-Reduced DIMM) |
| Memory Technology | DDR4 SDRAM |
| Capacity | 64 GB |
| Speed | 3200 MT/s (PC4-25600) |
| Operating Voltage | 1.2 V |
| ECC Support | Yes |
| Data Width | 72-bit (64-bit + 8-bit ECC) |
| Ranks | 4Rx4 |
| Die Density | 16 Gb |
| CAS Latency (CL) | 22 |
| tRCD | 22 |
| tRP | 22 |
| Operating Temperature | 0°C to 85°C |
| JEDEC Compliance | JEDEC DDR4 LRDIMM Standard |
| RoHS Compliance | Yes |
Frequently Asked Questions about Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE
What does the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE do?
The Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
What are the headline specs of the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE?
Key specifications for the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE: capacity 64 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 64GB; memory speed 3200 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386ABG40B50-CWE. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.
Is the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE compatible with my infrastructure?
The Samsung 64GB DDR4 LRDIMM M386ABG40B50-CWE fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.