Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE

Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M386ABG40A50CWE | Part #: M386ABG40A50-CWE | MPN: M386ABG40A50-CWE

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About the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE

The Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE delivers CAS latency of 22 cycles at just 1.2V, a critical specification for high-frequency trading platforms and in-memory database workloads where nanosecond-level timing directly impacts throughput. This Samsung module operates at DDR4-3200 speed (PC4-25600) with a robust 3200 MT/s data transfer rate, enabling enterprise-class servers to sustain demanding computational loads without thermal or power penalties. The quad-rank (4Rx4) x4 organization across 288 pins provides exceptional density per slot, while the registered LRDIMM architecture with integrated data buffer reduces electrical stress on the memory controller—essential for multi-socket systems scaling to 1TB+ memory configurations.

Enterprise storage architects, AI infrastructure teams, and IT procurement departments standardly specify this part for mission-critical deployments requiring ECC protection and load-reduced topologies. The M386ABG50-CWE's RoHS compliance and JEDEC DDR4 standards certification ensure compatibility across OEM server platforms—from HPE ProLiant and Dell PowerEdge to Lenovo ThinkSystem environments. Organizations running virtualization hypervisors, data warehousing clusters, and real-time analytics benefit from the module's ability to operate reliably across 0–85°C ambient ranges without performance throttling, directly reducing total cost of ownership by extending server lifespan and eliminating premature memory failures.

Samsung memory remains the preferred choice for Tier-1 data center operators across EMEA and Asia-Pacific regions seeking proven reliability and vendor continuity. Omnixon Global stocks the M386ABG40A50-CWE for immediate allocation to qualified resellers and end-user accounts throughout the UAE, GCC, and broader Middle East territory. For volume pricing, technical specifications, or integration support, please submit an RFQ through Omnixon Global today.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAM-M386ABG40A50CWE
Part NumberM386ABG40A50-CWE
ConditionNew
Capacity64 GB
Form FactorLRDIMM
Speed3200 Mbps
Manufacturer Part NumberM386ABG40A50-CWE
Capacity64 GB
Memory TypeDDR4
Module Form FactorLRDIMM (Load-Reduced DIMM)
Pin Configuration288-pin
Speed GradeDDR4-3200
PC RatingPC4-25600
Operating Voltage1.2 V
Error CorrectionECC (Error-Correcting Code)
RegisteredYes (with data buffer)
Data Transfer Rate3200 MT/s
CAS Latency (CL)22
Module Ranks4Rx4 (Quad Rank, x4 organization)
DRAM Die TechnologyDDR4 SDRAM
RoHS ComplianceRoHS compliant
Operating Temperature0°C to 85°C
Interface StandardJEDEC DDR4

Frequently Asked Questions about Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE

What does the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE do?

The Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE?

Key specifications for the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE: capacity 64 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 64GB; memory speed 3200 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386ABG40A50-CWE. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE compatible with my infrastructure?

The Samsung 64GB DDR4 LRDIMM M386ABG40A50-CWE fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.