Samsung 16GB DDR5 RDIMM M321R2GA3EB2-CCP

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M321R2GA3EB2CCP | Part #: M321R2GA3EB2-CCP | MPN: M321R2GA3EB2-CCP

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The Samsung 16GB DDR5 RDIMM M321R2GA3EB2-CCP delivers 6400 MT/s performance in a single-rank, low-profile form factor designed for modern data centre and high-performance computing environments. This module runs at PC5-51200 speeds with a 1.1 V operating voltage, meeting the full JEDEC DDR5 standard while maintaining compatibility with enterprise-grade server platforms. The M321R2GA3EB2-CCP combines Samsung's proven memory reliability with the density and speed demands of contemporary workloads ranging from virtualisation to AI infrastructure.

Data centre infrastructure teams and server architects select this Samsung memory module because it balances capacity with thermal efficiency. The low-profile 31.25 mm height fits within standard server chassis constraints, while the 1Rx8 single-rank configuration reduces per-module power consumption and simplifies slot population in dual-socket systems. The M321R2GA3EB2-CCP integrates on-die error correction code (ECC), which is mandatory for registered DIMM deployments in production environments where data integrity cannot be negotiated. This feature makes it suitable for configurations where a sysadmin or infrastructure team must guarantee zero silent data corruption across CPU, memory controller, and storage layers. The 288-pin design ensures proper electrical isolation and signal integrity across the 72-bit (ECC-inclusive) data path, critical when scaling from four modules per socket to sixteen or more across larger chassis.

Samsung has engineered the M321R2GA3EB2-CCP to operate reliably between 0°C and 85°C, accommodating both standard data centre cooling and edge deployment scenarios where ambient temperature control may be less stringent. The CAS latency of CL46 is characteristic of DDR5 timing at this frequency; while numerically higher than DDR4 latencies, the absolute nanosecond value reflects DDR5's significantly faster clock rates and tighter operational windows. For infrastructure supporting transactional databases, containerised services, or machine learning workloads that stress memory bandwidth and capacity simultaneously, this latency profile remains acceptable when paired with the 64-bit (72-bit with ECC) data width. Server memory configurators will immediately recognise this as a Samsung part engineered for Xeon and EPYC platforms where registered DIMMs with ECC are the only certified option.

Procurement teams in the GCC region often evaluate single-rank modules like the M321R2GA3EB2-CCP against dual-rank alternatives when planning capacity upgrades. The decision typically hinges on power budgets, thermal headroom, and future scalability. Single-rank modules draw less power per gigabyte and generate less heat, but dual-rank configurations deliver higher overall capacity per socket when DIMM slot density is limited. The Samsung M321R2GA3EB2-CCP occupies a middle ground: it provides 16 GB of reliable, ECC-protected storage at speeds that match the latest generation of enterprise processors without forcing costly dual-socket upgrades or extensive chassis redesigns. The part number M321R2GA3EB2-CCP also integrates seamlessly into mixed-generation deployments where legacy DDR4 coexists alongside new DDR5 infrastructure—though DDR5 and DDR4 modules cannot share a single motherboard, Samsung's consistent quality across both generations simplifies inventory management and vendor relationships.

Omnixon Global stocks the Samsung 16GB DDR5 RDIMM M321R2GA3EB2-CCP and comparable memory modules for immediate delivery across the UAE, Saudi Arabia, Kuwait, and broader Asian markets. Our procurement specialists work directly with data centre operators, AI labs, and enterprise IT teams to configure validated memory kits for specific server models and workload profiles. If you are evaluating DDR5 memory for an upcoming refresh, capacity upgrade, or new deployment, we invite you to submit an RFQ with your server specification and scaling timeline.

DDR5 Memory Specifications and Compatibility

• Capacity and Speed: 16 GB at 6400 MT/s (PC5-51200) with CAS Latency CL46
• ECC Protection: On-Die ECC for single-bit error correction and detection across the 72-bit data path
• Form Factor: Low-profile 31.25 mm RDIMM (Registered DIMM) with 288-pin connector for JEDEC DDR5 compliance
• Thermal and Voltage: Operates at 1.1 V with a 0°C to 85°C temperature range, suitable for standard and edge data centre environments
• Rank Configuration: 1Rx8 single-rank design optimised for power efficiency and compatibility with dual-socket server layouts
• Platform Compatibility: Certified for Intel Xeon and AMD EPYC processors requiring registered ECC memory in production deployments
• Reliability and Support: Samsung manufacturing with full JEDEC standard adherence ensures vendor-neutral deployment and long-term availability