Brand: Samsung | Category: Memory (RAM)
SKU: SAM-M386AAG40DM3CWE | Part #: M386AAG40DM3-CWE | MPN: M386AAG40DM3-CWE
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The Samsung M386AAG40DM3-CWE represents the kind of memory module that infrastructure teams across the GCC specify when they need absolute certainty that their systems will handle sustained workloads without silent data corruption. This 128GB DDR4 LRDIMM is built on a quad-rank, four-channel architecture (4Rx4) with Samsung's iMB isolation memory buffer design, meaning it distributes electrical load across the DIMM in a way that allows data centres to populate server slots more densely than standard RDIMMs would permit. The L in LRDIMM stands for load-reduced—a distinction that matters enormously when your storage architect is designing a system with eight or sixteen memory slots per processor, because that's where traditional registered DIMMs start to hit electrical strain limits and require de-rating.
ECC (Error-Correcting Code) protection is integrated at the chip level, not as an afterthought. Samsung designed the M386AAG40DM3-CWE to detect and correct single-bit errors on the fly, which is why this module appears in configurations for banking systems, insurance platforms, scientific computing clusters, and any AI training pipeline where a bit flip at hour 72 of a 96-hour job becomes a financial problem rather than a simple restart. The 1.2-volt operating profile and JEDEC DDR4 standard mean this module integrates smoothly with enterprise-grade platforms; there's no special firmware required, no vendor lock-in. At 31.25 mm height, the module fits into standard server form factors without requiring special riser cards or custom chassis modifications. Speed-wise, the DDR4-3200 specification (PC4-25600 transfer rate) sits in the productive middle ground—not the absolute peak of what DDR4 physics allows, but rather where reliability margins are broadest and where multiple vendors certify compatibility simultaneously.
Platform compatibility starts with rank configuration and ECC type, not megahertz. Infrastructure teams evaluating the M386AAG40DM3-CWE first confirm that their chosen processor socket (typically Intel Xeon or equivalent AMD EPYC generation) officially supports LRDIMM architecture in general, then they verify that their system BIOS recognizes quad-rank modules without requiring special settings or microcode updates. Many organisations skip this step and discover mid-deployment that their platform supports only dual-rank LRDIMMs, or worse, that ECC must be explicitly enabled in BIOS despite being physically present. The 288-pin form factor is standard DDR4, so physical insertion is straightforward, but electrical negotiation between the isolation memory buffer and the memory controller demands clean firmware. This is why experienced procurement teams work backward from their server qualification matrix rather than forward from a vendor's datasheet. The operating temperature range of 0°C to 85°C accommodates both passively cooled secondary memory tiers in cooler climates and actively cooled primary memory in dense blade enclosures.
Real-world deployment scenarios for this module fall into recognizable patterns across our GCC customer base. First, there's the scale-out data warehouse use case: enterprises running distributed SQL or NoSQL clusters where each node needs substantial memory density to minimise cross-node network traffic. Second, AI infrastructure teams provisioning GPU or accelerator nodes that pair 256GB to 512GB of system RAM with multiple high-end GPUs, where the RAM serves as a staging area for training datasets too large for accelerator memory alone. Third, the virtualisation platform where storage architects need to consolidate physical machines, and each hypervisor instance demands isolation of memory errors to prevent cascading failures across tenant workloads. Fourth, the traditional transactional database landscape where financial institutions or insurance companies run in-memory caches with redundancy—they'll populate servers with sixteen or eighteen of these modules and mirror the entire state across multiple physical nodes for disaster recovery. Each scenario places the Samsung M386AAG40DM3-CWE in a role where capacity and reliability outweigh the marginal performance gain from slightly faster memory. A sysadmin or infrastructure team lead will typically evaluate this module against alternatives only after confirming their platform matrix already lists LRDIMM support; once that box is checked, the choice becomes whether to standardise on Samsung, Micron, SK Hynix, or another vendor offering the same 128GB 4Rx4 DDR4-3200 configuration.
Omnixon Global stocks the Samsung M386AAG40DM3-CWE and maintains relationships with regional resellers, OEM procurement offices, and systems integrators across the UAE, Saudi Arabia, and the broader Asian supply corridor. If your organisation is evaluating memory configurations for a planned infrastructure refresh, a scale-out database cluster, or an AI lab expansion, we can facilitate technical discussions with your engineering team and provide detailed compatibility reports against your specific hardware stack. We welcome requests for quotation, technical datasheets, and bulk lead-time confirmation. Reach out to our enterprise sales team to discuss your memory requirements and secure allocation of this module for your next procurement cycle.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAM-M386AAG40DM3CWE |
| Part Number | M386AAG40DM3-CWE |
| Condition | New |
| Capacity | 128 GB |
| Form Factor | LRDIMM |
| Speed | 3200 Mbps |
| Manufacturer Part Number | M386AAG40DM3-CWE |
| Capacity | 128 GB |
| Memory Type | DDR4 |
| Module Form Factor | LRDIMM (Load-Reduced DIMM) |
| Speed Grade | DDR4-3200 |
| Transfer Rate | PC4-25600 |
| Pin Count | 288-pin |
| Voltage | 1.2 V |
| Rank Configuration | 4Rx4 (Quad Rank x4) |
| Error Correction | ECC (Error-Correcting Code) |
| Buffer Type | iMB (Isolation Memory Buffer) |
| CAS Latency | 22 |
| Module Standard | JEDEC DDR4 |
| Operating Temperature | 0°C to 85°C |
| Module Height | Low Profile (31.25 mm) |
The Samsung 128GB DDR4 LRDIMM M386AAG40DM3-CWE is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
Key specifications for the Samsung 128GB DDR4 LRDIMM M386AAG40DM3-CWE: capacity 128 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 128GB; memory speed 3200 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386AAG40DM3-CWE. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.
The Samsung 128GB DDR4 LRDIMM M386AAG40DM3-CWE fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.