Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC

Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M386AAG40EM3CRC | Part #: M386AAG40EM3-CRC | MPN: M386AAG40EM3-CRC

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About the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC

CL17 at 1.2V — the Samsung M386AAG40EM3-CRC delivers predictable latency for latency-sensitive workloads, from high-frequency trading platforms to in-memory databases that demand sub-microsecond response times. This 128GB DDR4 LRDIMM operates at 2400 MT/s (PC4-19200) with full ECC protection, making it the standard choice for mission-critical enterprise servers where data integrity cannot be compromised. The octal rank (8Rx4) configuration and load-reduced design enable maximum memory density per socket on Intel Xeon Scalable (Purley-generation) platforms, reducing overall server footprint while scaling storage capacity across large clusters.

Samsung's M386AAG40EM3-CRC is engineered for infrastructure teams managing virtualization farms, database clusters, and consolidated workloads that require both capacity and reliability. The 288-pin LRDIMM form factor distributes electrical load across ranks, extending system stability and lifespan in 24/7 production environments. Operating across 0–85°C, this module handles demanding thermal conditions in dense data centre racks. Storage architects and IT procurement teams standardize on this part number for predictable performance across multiple server generations. Contact Omnixon Global for an RFQ on this Samsung memory module.

Typical Enterprise Deployment Scenarios

  • Consolidation of large SAP, Oracle, and PostgreSQL databases on shared server pools
  • Hypervisor memory pools for VMware vSphere and Hyper-V environments scaling beyond 2TB per host
  • Real-time analytics and BI platforms requiring sub-second query latency across terabyte datasets
  • High-throughput financial and market-data platforms where CAS latency directly impacts transaction throughput
  • Disaster-recovery and failover clusters where ECC detection and single-bit correction prevent cascade failures

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAM-M386AAG40EM3CRC
Part NumberM386AAG40EM3-CRC
ConditionNew
Capacity128 GB
Form FactorLRDIMM
Speed2400 Mbps
Manufacturer Part NumberM386AAG40EM3-CRC
Capacity128 GB
Memory TypeDDR4
Module Form FactorLRDIMM (Load-Reduced DIMM)
Speed2400 MT/s (PC4-19200)
Pin Count288-pin
Voltage1.2 V
Rank Configuration8Rx4 (Octal Rank)
ECCYes
Error CorrectionECC (Single-bit correction, multi-bit detection)
CAS Latency17 (CL17)
Module HeightStandard DIMM height (31.25 mm)
Operating Temperature0°C to 85°C
JEDEC ComplianceDDR4 LRDIMM JEDEC Standard
Data Width72-bit (64-bit data + 8-bit ECC)
Primary Compatible PlatformIntel Xeon Scalable (Purley platform) DDR4-2400 LRDIMM-capable servers

Frequently Asked Questions about Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC

What does the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC do?

The Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC?

Key specifications for the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC: capacity 128 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 128GB; memory speed 2400 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386AAG40EM3-CRC. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC compatible with my infrastructure?

The Samsung 128GB DDR4 LRDIMM M386AAG40EM3-CRC fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.