Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC

Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M386ABG40A50CRC | Part #: M386ABG40A50-CRC | MPN: M386ABG40A50-CRC

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About the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC

The Samsung M386ABG40A50-CRC is a 64GB DDR4-2400 LRDIMM (Load-Reduced Dual Inline Memory Module) engineered for Intel Xeon Scalable processors and AMD EPYC systems requiring high-capacity memory per channel. This 4-rank, registered module delivers 2400 MT/s throughput at 1.2V with integrated load-reduction buffering, making it ideal for multi-socket enterprise servers that demand reliable, scalable memory expansion without compromising signal integrity across deep memory hierarchies.

Samsung designed the M386ABG40A50-CRC with full ECC support (SECDED architecture), CAS latency 17, and 72-bit DRAM bus width to ensure fault tolerance in mission-critical workloads. Storage architects, data center infrastructure teams, and IT procurement managers select this LRDIMM when building 2-socket or 4-socket Xeon or EPYC platforms that require densification beyond standard UDIMM limitations. The 288-pin form factor, JEDEC compliance, and RoHS certification guarantee compatibility with validated OEM configurations while meeting enterprise sustainability requirements. Operating across the full 0°C–85°C temperature window, this Samsung module supports continuous uptime in demanding environments—from virtualization farms to high-performance computing clusters where memory density directly impacts total cost of ownership.

Omnixon Global stocks the Samsung M386ABG40A50-CRC as part of our comprehensive enterprise memory portfolio. Whether you are scaling an existing infrastructure or architecting new server platforms in the UAE, GCC, or broader EMEA region, our technical specialists can validate compatibility with your exact Xeon or EPYC generation and help optimize your memory configuration. Contact Omnixon Global today to submit a Request for Quotation and discuss volume pricing, lead times, and technical support for this high-capacity DDR4 LRDIMM.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAM-M386ABG40A50CRC
Part NumberM386ABG40A50-CRC
ConditionNew
Capacity64 GB
Form FactorLRDIMM
Speed2400 Mbps
Manufacturer Part NumberM386ABG40A50-CRC
Module TypeLRDIMM (Load-Reduced Dual Inline Memory Module)
Capacity64 GB
DDR GenerationDDR4
Speed GradeDDR4-2400 (PC4-19200)
Data Transfer Rate2400 MT/s
Voltage1.2 V
Form Factor288-pin DIMM
ECC SupportYes – ECC (SECDED: Single-bit Error Correction, Double-bit Error Detection)
RegisteredYes (with Load-Reduction Buffer)
CAS Latency (CL)17
Timing17-17-17
Ranks4-Rank (4R)
DRAM Bus Width72-bit (64-bit data + 8-bit ECC)
Operating Temperature0°C to 85°C
RoHS CompliantYes
JEDEC StandardJEDEC DDR4 LRDIMM

Frequently Asked Questions about Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC

What does the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC do?

The Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC?

Key specifications for the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC: capacity 64 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 64GB; memory speed 2400 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386ABG40A50-CRC. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC compatible with my infrastructure?

The Samsung 64GB DDR4 LRDIMM M386ABG40A50-CRC fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.