Samsung 64GB DDR4 LRDIMM M386ABG40B50-CRC
Brand: Samsung | Category: Memory (RAM)
SKU: SAM-M386ABG40B50CRC | Part #: M386ABG40B50-CRC | MPN: M386ABG40B50-CRC
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About the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CRC
A single Samsung 64GB DDR4 LRDIMM (model M386ABG40B50-CRC) enables system memory configurations up to 6TB per server when deployed across 96 DIMM slots in high-density chassis. This quad-rank, load-reduced module is engineered for enterprise data centers where memory density and reliability define operational capability. Storage architects and infrastructure teams select this component to maximize per-socket memory capacity without sacrificing stability or thermal performance.
The M386ABG40B50-CRC operates at DDR4-2400 (PC4-19200) with full ECC protection, 1.2V nominal voltage, and a compact 31.25mm low-profile form factor that fits industry-standard server designs. Samsung's proven LRDIMM architecture reduces load on the memory controller while supporting 4Rx4 rank configuration—critical for large-footprint deployments. CAS latency of CL17 and a 2400 MT/s data transfer rate deliver predictable latency for mission-critical workloads. RoHS compliance ensures regulatory alignment across EMEA and APAC procurement cycles.
Typical Enterprise Deployment Scenarios
- In-memory databases and data warehouses requiring 2TB+ per node
- VMware vSphere and Hyper-V clusters with 100+ VM densities
- Big Data analytics platforms (Hadoop, Spark) needing ultra-low access latency
- Real-time financial trading systems with sub-millisecond response requirements
- SAP HANA and Oracle Database environments scaling to terabyte-class datasets
Samsung's DDR4 LRDIMM technology has become the industry standard for enterprise server refresh cycles across 2U and 4U platforms. Omnixon Global stocks the M386ABG40B50-CRC for immediate availability across UAE and GCC markets, with full technical documentation and compatibility verification. Contact our IT procurement specialists to request a quote and confirm platform compatibility for your infrastructure roadmap.
Technical Specifications
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAM-M386ABG40B50CRC |
| Part Number | M386ABG40B50-CRC |
| Condition | New |
| Capacity | 64 GB |
| Form Factor | LRDIMM |
| Speed | 2400 Mbps |
| Manufacturer Part Number | M386ABG40B50-CRC |
| Capacity | 64 GB |
| Memory Type | DDR4 |
| Module Form Factor | LRDIMM (Load-Reduced DIMM) |
| Pin Configuration | 288-pin |
| Speed Grade | DDR4-2400 |
| PC Equivalent | PC4-19200 |
| Operating Voltage | 1.2 V |
| Error Correction | ECC (Error-Correcting Code) |
| CAS Latency | CL17 |
| Module Ranks | 4Rx4 (Quad-Rank) |
| DRAM Bus Width | x4 per DRAM device |
| Data Transfer Rate | 2400 MT/s |
| Operating Temperature | 0°C to 85°C |
| Module Height | Low Profile (31.25 mm) |
| RoHS Compliant | Yes |
Frequently Asked Questions about Samsung 64GB DDR4 LRDIMM M386ABG40B50-CRC
What does the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CRC do?
The Samsung 64GB DDR4 LRDIMM M386ABG40B50-CRC is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
What are the headline specs of the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CRC?
Key specifications for the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CRC: capacity 64 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 64GB; memory speed 2400 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386ABG40B50-CRC. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.
Is the Samsung 64GB DDR4 LRDIMM M386ABG40B50-CRC compatible with my infrastructure?
The Samsung 64GB DDR4 LRDIMM M386ABG40B50-CRC fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.