Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC
Brand: Samsung | Category: Memory (RAM)
SKU: SAM-M386ABG40D50CRC | Part #: M386ABG40D50-CRC | MPN: M386ABG40D50-CRC
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About the Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC
The Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC is a 4-rank registered memory module with ECC protection, engineered for enterprise servers requiring high-density memory expansion with load reduction capability. This LRDIMM architecture is ideal for platforms that demand reliable, error-corrected performance across distributed workloads in data centre environments.
Built by Samsung, the M386ABG40D50-CRC delivers DDR4-2400 (PC4-19200) performance at 1.2 V operating voltage with CAS latency 17, ensuring stable operation across demanding multi-socket server configurations. The 4Rx4 rank configuration and integrated load-reduction buffer minimise electrical stress on memory controllers, extending system stability during peak utilisation. ECC capability provides single-bit error correction and double-bit error detection, critical for mission-critical applications where data integrity is non-negotiable. Storage architects, infrastructure teams, and IT procurement departments routinely specify this module for virtualisation clusters, database servers, and high-compute environments. The 288-pin form factor and standard LRDIMM height ensure compatibility with most enterprise-grade server platforms supporting DDR4 technology. RoHS compliance confirms environmental responsibility without compromising performance or reliability.
Key Specifications
- Capacity: 64 GB
- Module Type: 4-rank LRDIMM (Load-Reduced DIMM) with registered buffer
- Speed: DDR4-2400 MT/s, CAS Latency 17
- Error Correction: ECC with single-bit correction, double-bit detection
- Operating Voltage: 1.2 V, 0–85°C commercial temperature range
- Part Number: M386ABG40D50-CRC (Samsung)
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Technical Specifications
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAM-M386ABG40D50CRC |
| Part Number | M386ABG40D50-CRC |
| Condition | New |
| Capacity | 64 GB |
| Form Factor | LRDIMM |
| Speed | 2400 Mbps |
| Manufacturer Part Number | M386ABG40D50-CRC |
| Module Type | LRDIMM (Load-Reduced DIMM) |
| Capacity | 64 GB |
| Memory Technology | DDR4 SDRAM |
| Speed Grade | DDR4-2400 (PC4-19200) |
| Data Transfer Rate | 2400 MT/s |
| Pin Count | 288-pin |
| Operating Voltage | 1.2 V |
| Error Correction | ECC (Single-bit correction, double-bit detection) |
| Ranks | 4-rank (4Rx4) |
| Die Density | 16 Gb |
| DRAM Organization | 4Rx4 |
| Module Height (Form Factor) | DDR4 LRDIMM (standard 1.2 V LRDIMM) |
| CAS Latency | 17 (CL17 at DDR4-2400) |
| Registered | Yes (with Load Reduction Buffer) |
| On-Die Termination (ODT) | Supported |
| Operating Temperature | 0°C to 85°C (standard commercial range) |
| RoHS Compliance | RoHS compliant |
Frequently Asked Questions about Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC
What does the Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC do?
The Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC is enterprise LRDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
What are the headline specs of the Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC?
Key specifications for the Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC: capacity 64 GB; form factor LRDIMM; new condition; memory type DDR4; memory capacity 64GB; memory speed 2400 MT/s; memory voltage 1.2V; memory form factor LRDIMM. Manufacturer part number M386ABG40D50-CRC. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.
Is the Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC compatible with my infrastructure?
The Samsung 64GB DDR4 LRDIMM M386ABG40D50-CRC fits LRDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.