Brand: SK Hynix | Category: Memory (RAM)
SKU: SKHY-H5CG8AGBDM010RBL | Part #: H5CG8AGBDM010RBL | MPN: H5CG8AGBDM010RBL
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The SK Hynix HBM3E 36GB Mach-1 stack represents the fourth generation of High Bandwidth Memory technology, built on SK Hynix's advanced 10nm-class DRAM process and stacked using Through-Silicon Via (TSV) interconnect technology across 12 active DRAM dies plus a base logic die. Each stack provides 36GB of capacity, achieved through a 12-high die configuration using 3GB per die, making it the highest-capacity single HBM3E stack commercially available at launch in Q1 2025. The architecture implements a 1024-bit wide memory interface operating at up to 9.2 Gbps per pin, delivering a peak aggregate bandwidth of 1.18 TB/s per stack — a roughly 50% improvement over HBM3 baseline specifications and critical for feeding the ever-expanding compute appetites of modern AI training and inference accelerators.
The Mach-1 designation reflects SK Hynix's internal product naming for its first-generation HBM3E offering, engineered specifically to integrate with next-generation GPU and AI ASIC packages from major silicon vendors deploying 2.5D advanced packaging via silicon interposers or silicon bridges. The memory stack is designed to operate within tight thermal envelopes common in high-density accelerator modules, featuring refined power delivery and thermal management characteristics compared to prior HBM generations. Error Correction Code (ECC) functionality is embedded throughout the die stack, ensuring data integrity for mission-critical AI model training and scientific workloads where bit errors could corrupt multi-day training runs.
From a system-level perspective, the HBM3E 36GB Mach-1 stack is purpose-built for deployment in data center AI infrastructure at scale — including large language model (LLM) training clusters, high-performance inference engines, and scientific simulation platforms. Its combination of extreme bandwidth, high per-stack capacity, and compatibility with leading 2.5D packaging ecosystems positions it as a foundational memory component for accelerators targeting the most demanding frontier AI workloads, including generative AI, graph neural networks, and high-fidelity physics simulation.
| Manufacturer | SK Hynix |
| Product Name | HBM3E 36GB Stack (Mach-1) |
| Memory Standard | HBM3E (JEDEC JESD238) |
| Capacity per Stack | 36 GB |
| Die Configuration | 12-high active DRAM dies + 1 base logic die (12H stack) |
| Capacity per Die | 3 GB (24 Gb) |
| Interface Width | 1024-bit (per stack) |
| Memory Channels per Stack | 16 channels × 64-bit |
| Data Rate per Pin | Up to 9.2 Gbps |
| Peak Bandwidth per Stack | 1.18 TB/s |
| Memory Technology | 10nm-class (1c nm node) DRAM |
| Interconnect Technology | Through-Silicon Via (TSV) |
| Packaging Compatibility | 2.5D silicon interposer (CoWoS, EMIB, and equivalent advanced packaging platforms) |
| Error Correction | On-die ECC (ODECC) per die layer |
| Operating Voltage (VDD) | 1.05 V nominal |
| Typical Power Consumption | Approximately 15–20 W per stack at peak bandwidth (workload dependent) |
| Form Factor | HBM stack die module (bare die, interposer-mounted) |
| Stack Height (physical) | ≈ 720 µm (12H TSV stack) |
| Target Integration | AI GPU packages, AI ASIC packages (co-packaged via silicon interposer) |
| Launch Generation | HBM3E (4th-generation HBM) |
| Commercial Availability | Q1 2025 |
| Primary Market Segment | Data center AI training and inference accelerators, HPC |
Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.
| Brand | SK Hynix |
| Category | Memory (RAM) |
| SKU | SKHY-H5CG8AGBDM010RBL |
| Part Number | H5CG8AGBDM010RBL |
| Condition | New |
| Product Name | HBM3E 36GB Stack (Mach-1) |
| Memory Standard | HBM3E (JEDEC JESD238) |
| Capacity per Stack | 36 GB |
| Die Configuration | 12-high active DRAM dies + 1 base logic die (12H stack) |
| Capacity per Die | 3 GB (24 Gb) |
| Interface Width | 1024-bit (per stack) |
| Memory Channels per Stack | 16 channels × 64-bit |
| Data Rate per Pin | Up to 9.2 Gbps |
| Peak Bandwidth per Stack | 1.18 TB/s |
| Memory Technology | 10nm-class (1c nm node) DRAM |
| Interconnect Technology | Through-Silicon Via (TSV) |
| Packaging Compatibility | 2.5D silicon interposer (CoWoS, EMIB, and equivalent advanced packaging platforms) |
| Error Correction | On-die ECC (ODECC) per die layer |
| Operating Voltage (VDD) | 1.05 V nominal |
| Typical Power Consumption | Approximately 15–20 W per stack at peak bandwidth (workload dependent) |
| Form Factor | HBM stack die module (bare die, interposer-mounted) |
| Stack Height (physical) | ≈ 720 µm (12H TSV stack) |
| Target Integration | AI GPU packages, AI ASIC packages (co-packaged via silicon interposer) |
| Launch Generation | HBM3E (4th-generation HBM) |
| Commercial Availability | Q1 2025 |
| Primary Market Segment | Data center AI training and inference accelerators, HPC |
The SK Hynix HBM3E 36GB Stack (Mach-1) is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. SK Hynix validates this module against major server vendor compatibility matrices.
Key specifications for the SK Hynix HBM3E 36GB Stack (Mach-1): new condition; manufacturer SK Hynix; product name HBM3E 36GB Stack (Mach-1); memory standard HBM3E (JEDEC JESD238); capacity per stack 36 GB; die configuration 12-high active DRAM dies + 1 base logic die (12H stack); capacity per die 3 GB (24 Gb). Manufacturer part number H5CG8AGBDM010RBL. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.