Micron 96GB DDR5-5600 LRDIMM 2Rx4

The Micron 96GB DDR5-5600 LRDIMM 2Rx4 is an enterprise-grade load-reduced dual inline memory module engineered to maximize addressable memory per socket in modern 5th-generation Intel Xeon Scalable and AMD EPYC platforms. Built on Micron's advanced DRAM fabrication technology, this LRDIMM leverages a registered data buffer architecture that decouples the memory controller electrical load from the DRAM devices, enabling dense 2Rx4 organization at DDR5-5600 transfer rates while maintaining signal integrity across fully populated memory channels. The module achieves 96GB capacity through high-density DRAM die stacking and advanced packaging, making it one of the most capacity-dense standard form-factor DIMMs available for mainstream server sockets as of its 2025-Q2 launch.

This LRDIMM is specifically architected for workloads that demand massive in-memory datasets with sustained bandwidth. SAP HANA deployments benefit directly from the ability to keep terabytes of live transactional and analytical data resident in DRAM, eliminating disk I/O bottlenecks and dramatically accelerating query execution. Oracle Database In-Memory, Microsoft SQL Server In-Memory OLTP, and large-scale Redis or Memcached deployments similarly leverage the extreme aggregate capacity achievable when populating a dual-socket server with 24 or more of these modules — enabling configurations exceeding 2TB per socket. The DDR5-5600 operating frequency delivers substantial bandwidth improvements over DDR4 predecessors, supporting AI inference pipelines that require rapid model weight loading and large activation tensor movement.

The 2Rx4 (dual rank, x4 device width) organization optimizes the balance between capacity density and memory access granularity, providing improved fault isolation through x4 DRAM device width which enables on-die ECC combined with module-level advanced ECC schemes. Micron's quality and reliability engineering ensures the module meets JEDEC DDR5 LRDIMM specifications including precise impedance control, thermal management via an integrated heat spreader, and SPD5 serial presence detect for automated platform configuration. The module operates at 1.1V, substantially reducing per-module power draw compared to DDR4 equivalents, a critical factor in thermally constrained high-density rack deployments running AI and HPC workloads 24/7.

Ideal for

• SAP HANA scale-up deployments where terabytes of live ERP, BW/4HANA, and S/4HANA data must reside entirely in DRAM for sub-second OLAP and OLTP query response times
• Oracle Database In-Memory and Oracle Exadata software-defined deployments requiring maximum per-socket DRAM capacity to host large in-memory column stores and buffer caches
• Large-scale AI inference servers loading multi-hundred-billion parameter transformer models into DRAM for low-latency token generation without NVMe or storage offload
• High-frequency trading and financial risk analytics platforms processing real-time market data streams with entire tick-history datasets held in memory for microsecond-latency access
• In-memory data grid and distributed caching infrastructure (Redis Enterprise, Apache Ignite, Hazelcast) where maximizing node memory capacity reduces cluster node count and inter-node network overhead
• Virtualization hosts running VDI or consolidated enterprise VM estates where large DRAM pools reduce memory ballooning, swapping, and hypervisor overhead across hundreds of concurrent virtual machines

Technical specifications

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.