Brand: Samsung | Category: Memory (RAM)
SKU: SAMS-M3R4R8GA3BB6CQKDS | Part #: M3R4R8GA3BB6-CQKDS | MPN: M3R4R8GA3BB6-CQKDS
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The Samsung MRDIMM DDR5 128GB 8800MHz represents a fundamental architectural advancement in server memory technology. MRDIMM—Multiplexed Rank DIMM—integrates an on-module multiplexer buffer that combines the signal integrity benefits of traditional RDIMMs with enhanced rank-switching agility, enabling data transfer rates of 8800MT/s that surpass conventional RDIMM and LRDIMM solutions. This module is engineered specifically for the Intel Xeon 6 processor platform, which exposes the full MRDIMM interface natively, making it the reference pairing for next-generation data center deployments launched in 2025-Q2.
At 128GB per module, the Samsung MRDIMM maximizes per-slot capacity while sustaining peak throughput, allowing system architects to build configurations with aggregate memory bandwidths exceeding multiple terabytes per second across fully populated dual-socket platforms. The multiplexer architecture reduces command-address bus loading and improves signal fidelity at extreme frequencies, directly addressing the physical limitations that previously capped DDR5 speed scaling. On-die ECC combined with post-package repair capabilities ensures data integrity across extended continuous operation typical in enterprise AI inference, training, and simulation environments.
This module targets memory-bandwidth-bound workloads where DRAM throughput is the primary performance bottleneck: large language model inference serving, scientific computing, genomics pipelines, seismic analysis, and in-memory analytics. Samsung's advanced 1-alpha (1α) DRAM node underpins the die design, delivering the density and power efficiency necessary to sustain 8800MT/s operation within standard DIMM thermal envelopes. The result is a drop-in high-bandwidth memory solution for hyperscale, HPC, and enterprise AI infrastructure without requiring exotic liquid cooling beyond what Xeon 6 platforms already support.
| Manufacturer | Samsung |
| Part Family | MRDIMM DDR5 |
| Capacity | 128 GB |
| Speed Grade | 8800 MT/s |
| Frequency | 4400 MHz (DDR5 effective 8800 MT/s) |
| Form Factor | 288-pin DIMM |
| Module Type | MRDIMM (Multiplexed Rank DIMM) |
| Voltage | 1.1 V |
| Ranks | Multiplexed multi-rank via on-module MUX buffer |
| ECC | On-Die ECC (ODECC) + Post-Package Repair (PPR) |
| Data Bus Width | 64-bit (72-bit with ECC) |
| Error Correction | ECC (Error Correcting Code) with full chip-kill capability |
| Compatible Platform | Intel Xeon 6 (Granite Rapids / Sierra Forest series) |
| DRAM Technology | Samsung 1α (1-alpha) node DDR5 SDRAM |
| On-Module Components | Integrated MUX (Multiplexer) buffer IC |
| Operating Temperature | 0°C to 85°C (JEDEC standard operating range) |
| RAS Features | Post-Package Repair (PPR), Command/Address Parity, CRC, SPD Hub |
| SPD Interface | Serial Presence Detect via I3C hub |
| Launch Date | 2025 Q2 |
| Peak Module Bandwidth | ~140 GB/s (theoretical at 8800 MT/s, 64-bit bus) |
| JEDEC Compliance | JEDEC DDR5 MRDIMM specification |
Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAMS-M3R4R8GA3BB6CQKDS |
| Part Number | M3R4R8GA3BB6-CQKDS |
| Condition | New |
| Part Family | MRDIMM DDR5 |
| Capacity | 128 GB |
| Speed Grade | 8800 MT/s |
| Frequency | 4400 MHz (DDR5 effective 8800 MT/s) |
| Form Factor | 288-pin DIMM |
| Module Type | MRDIMM (Multiplexed Rank DIMM) |
| Voltage | 1.1 V |
| Ranks | Multiplexed multi-rank via on-module MUX buffer |
| ECC | On-Die ECC (ODECC) + Post-Package Repair (PPR) |
| Data Bus Width | 64-bit (72-bit with ECC) |
| Error Correction | ECC (Error Correcting Code) with full chip-kill capability |
| Compatible Platform | Intel Xeon 6 (Granite Rapids / Sierra Forest series) |
| DRAM Technology | Samsung 1α (1-alpha) node DDR5 SDRAM |
| On-Module Components | Integrated MUX (Multiplexer) buffer IC |
| Operating Temperature | 0°C to 85°C (JEDEC standard operating range) |
| RAS Features | Post-Package Repair (PPR), Command/Address Parity, CRC, SPD Hub |
| SPD Interface | Serial Presence Detect via I3C hub |
| Launch Date | 2025 Q2 |
| Peak Module Bandwidth | ~140 GB/s (theoretical at 8800 MT/s, 64-bit bus) |
| JEDEC Compliance | JEDEC DDR5 MRDIMM specification |
The Samsung MRDIMM DDR5 128GB 8800MHz is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
Key specifications for the Samsung MRDIMM DDR5 128GB 8800MHz: new condition; manufacturer Samsung; part family MRDIMM DDR5; capacity 128 GB; speed grade 8800 MT/s; frequency 4400 MHz (DDR5 effective 8800 MT/s); form factor 288-pin DIMM. Manufacturer part number M3R4R8GA3BB6-CQKDS. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.