Samsung MRDIMM DDR5 128GB 8800MHz

Samsung MRDIMM DDR5 128GB 8800MHz

Brand: Samsung | Category: Memory (RAM)

SKU: SAMS-M3R4R8GA3BB6CQKDS | Part #: M3R4R8GA3BB6-CQKDS | MPN: M3R4R8GA3BB6-CQKDS

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About the Samsung MRDIMM DDR5 128GB 8800MHz

The Samsung MRDIMM DDR5 128GB 8800MHz represents a fundamental architectural advancement in server memory technology. MRDIMM—Multiplexed Rank DIMM—integrates an on-module multiplexer buffer that combines the signal integrity benefits of traditional RDIMMs with enhanced rank-switching agility, enabling data transfer rates of 8800MT/s that surpass conventional RDIMM and LRDIMM solutions. This module is engineered specifically for the Intel Xeon 6 processor platform, which exposes the full MRDIMM interface natively, making it the reference pairing for next-generation data center deployments launched in 2025-Q2.

At 128GB per module, the Samsung MRDIMM maximizes per-slot capacity while sustaining peak throughput, allowing system architects to build configurations with aggregate memory bandwidths exceeding multiple terabytes per second across fully populated dual-socket platforms. The multiplexer architecture reduces command-address bus loading and improves signal fidelity at extreme frequencies, directly addressing the physical limitations that previously capped DDR5 speed scaling. On-die ECC combined with post-package repair capabilities ensures data integrity across extended continuous operation typical in enterprise AI inference, training, and simulation environments.

This module targets memory-bandwidth-bound workloads where DRAM throughput is the primary performance bottleneck: large language model inference serving, scientific computing, genomics pipelines, seismic analysis, and in-memory analytics. Samsung's advanced 1-alpha (1α) DRAM node underpins the die design, delivering the density and power efficiency necessary to sustain 8800MT/s operation within standard DIMM thermal envelopes. The result is a drop-in high-bandwidth memory solution for hyperscale, HPC, and enterprise AI infrastructure without requiring exotic liquid cooling beyond what Xeon 6 platforms already support.

Ideal for

  • Large language model inference servers requiring maximum memory bandwidth to feed GPU and CPU compute engines simultaneously
  • High-performance computing clusters running computational fluid dynamics, molecular dynamics, and finite element analysis simulations
  • In-memory databases and real-time analytics platforms processing multi-terabyte datasets with sub-millisecond latency requirements
  • Genomics and bioinformatics pipelines executing sequence alignment and variant calling across whole-genome datasets
  • AI training pre-processing nodes that stage and shuffle large datasets at memory speed before offloading to accelerator clusters
  • Seismic imaging and reservoir simulation workloads in energy sector HPC environments demanding sustained bandwidth above 400 GB/s per socket

Technical specifications

ManufacturerSamsung
Part FamilyMRDIMM DDR5
Capacity128 GB
Speed Grade8800 MT/s
Frequency4400 MHz (DDR5 effective 8800 MT/s)
Form Factor288-pin DIMM
Module TypeMRDIMM (Multiplexed Rank DIMM)
Voltage1.1 V
RanksMultiplexed multi-rank via on-module MUX buffer
ECCOn-Die ECC (ODECC) + Post-Package Repair (PPR)
Data Bus Width64-bit (72-bit with ECC)
Error CorrectionECC (Error Correcting Code) with full chip-kill capability
Compatible PlatformIntel Xeon 6 (Granite Rapids / Sierra Forest series)
DRAM TechnologySamsung 1α (1-alpha) node DDR5 SDRAM
On-Module ComponentsIntegrated MUX (Multiplexer) buffer IC
Operating Temperature0°C to 85°C (JEDEC standard operating range)
RAS FeaturesPost-Package Repair (PPR), Command/Address Parity, CRC, SPD Hub
SPD InterfaceSerial Presence Detect via I3C hub
Launch Date2025 Q2
Peak Module Bandwidth~140 GB/s (theoretical at 8800 MT/s, 64-bit bus)
JEDEC ComplianceJEDEC DDR5 MRDIMM specification

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAMS-M3R4R8GA3BB6CQKDS
Part NumberM3R4R8GA3BB6-CQKDS
ConditionNew
Part FamilyMRDIMM DDR5
Capacity128 GB
Speed Grade8800 MT/s
Frequency4400 MHz (DDR5 effective 8800 MT/s)
Form Factor288-pin DIMM
Module TypeMRDIMM (Multiplexed Rank DIMM)
Voltage1.1 V
RanksMultiplexed multi-rank via on-module MUX buffer
ECCOn-Die ECC (ODECC) + Post-Package Repair (PPR)
Data Bus Width64-bit (72-bit with ECC)
Error CorrectionECC (Error Correcting Code) with full chip-kill capability
Compatible PlatformIntel Xeon 6 (Granite Rapids / Sierra Forest series)
DRAM TechnologySamsung 1α (1-alpha) node DDR5 SDRAM
On-Module ComponentsIntegrated MUX (Multiplexer) buffer IC
Operating Temperature0°C to 85°C (JEDEC standard operating range)
RAS FeaturesPost-Package Repair (PPR), Command/Address Parity, CRC, SPD Hub
SPD InterfaceSerial Presence Detect via I3C hub
Launch Date2025 Q2
Peak Module Bandwidth~140 GB/s (theoretical at 8800 MT/s, 64-bit bus)
JEDEC ComplianceJEDEC DDR5 MRDIMM specification

Frequently Asked Questions about Samsung MRDIMM DDR5 128GB 8800MHz

What does the Samsung MRDIMM DDR5 128GB 8800MHz do?

The Samsung MRDIMM DDR5 128GB 8800MHz is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung MRDIMM DDR5 128GB 8800MHz?

Key specifications for the Samsung MRDIMM DDR5 128GB 8800MHz: new condition; manufacturer Samsung; part family MRDIMM DDR5; capacity 128 GB; speed grade 8800 MT/s; frequency 4400 MHz (DDR5 effective 8800 MT/s); form factor 288-pin DIMM. Manufacturer part number M3R4R8GA3BB6-CQKDS. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.