Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM

Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M321R4GA3PB0-CWMKJ | Part #: M321R4GA3PB0-CWMKJ | MPN: M321R4GA3PB0-CWMKJ

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About the Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM

A single 32GB DDR5-5600 ECC RDIMM module enables enterprise servers to scale memory capacity to 2TB+ per system, depending on socket configuration and platform architecture. The Samsung M321R4GA3PB0-CWMKJ delivers registered DIMM topology with error-correcting code at 5600 MT/s, meeting JEDEC DDR5 standards for maximum reliability in mission-critical environments. Operating at just 1.1V with dual-rank 2Rx8 configuration, this Samsung module combines density with efficiency—a key requirement for modern data center workloads that demand both speed and fault tolerance.

Storage architects, network engineers, and IT infrastructure teams standardize on ECC memory for hyperscale deployments, database clusters, and virtualization platforms where undetected bit errors directly impact uptime and data integrity. The M321R4GA3PB0-CWMKJ's on-die ECC per DDR5 specification, coupled with register buffering for command/address isolation, ensures signal integrity across high-density DIMM arrays. Organizations running SAP HANA, Oracle databases, or Kubernetes environments depend on Samsung's enterprise-grade modules to eliminate memory-related downtime; the 10-layer PCB design and 0–85°C operating range reinforce stability in demanding thermal conditions.

Omnixon Global supplies Samsung DDR5 ECC RDIMMs to enterprises across the UAE, GCC, and broader Middle East region seeking OEM-certified components with full traceability and warranty support. We maintain stock of the M321R4GA3PB0-CWMKJ and related memory SKUs to accelerate procurement cycles for large-scale infrastructure refresh projects. Contact our sales team to request pricing, configuration guidance, and technical datasheets—submit an RFQ through Omnixon Global today.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAM-M321R4GA3PB0-CWMKJ
Part NumberM321R4GA3PB0-CWMKJ
ConditionNew
Capacity32GB
Form FactorRDIMM
InterfaceDDR5
Speed5600 MT/s
Manufacturer Part NumberM321R4GA3PB0-CWMKJ
Capacity32GB
Memory TypeDDR5 SDRAM
Form FactorRDIMM (Registered DIMM)
Speed GradeDDR5-5600 (5600 MT/s)
Module Interface288-pin
Error CorrectionECC (Error-Correcting Code)
Rank Configuration2Rx8 (Dual Rank)
DRAM Organization4Gx8
Operating Voltage1.1V
On-Die ECCYes (DRAM-level on-die ECC per DDR5 specification)
Register (RCD)Yes — buffered command/address for RDIMM topology
JEDEC ComplianceJEDEC DDR5 standard compliant
Operating Temperature0°C to 85°C (standard commercial/server range)
PCB Layers10-layer

Frequently Asked Questions about Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM

What does the Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM do?

The Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM is enterprise RDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM?

Key specifications for the Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM: capacity 32GB; form factor RDIMM; interface DDR5; new condition; capacity 32GB; memory type DDR5-5600; module type ECC RDIMM; use case Servers, workstations, and enterprise platforms. Manufacturer part number M321R4GA3PB0-CWMKJ. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM compatible with my infrastructure?

The Samsung M321R4GA3PB0-CWMKJ 32GB DDR5-5600 ECC RDIMM fits RDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.