Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM

Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M321R4GA0PB0-CWMXJ | Part #: M321R4GA0PB0-CWMXJ | MPN: M321R4GA0PB0-CWMXJ

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About the Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM

Registered ECC DDR5 RDIMM modules deliver mission-critical memory stability for enterprise server platforms—this Samsung M321R4GA0PB0-CWMXJ 32GB configuration is purpose-built for Intel Xeon Scalable (Sapphire Rapids+) and AMD EPYC (DDR5-capable generations) environments where data integrity cannot be compromised. With dual-rank, x4 organization and full Error Correcting Code protection, this module ensures every transaction, calculation, and database operation remains protected against silent data corruption.

Storage architects and IT procurement teams standardizing on DDR5 will recognize this Samsung component as a certified JEDEC DDR5 RDIMM standard offering, engineered to sustain demanding virtualization, database, and high-performance computing workloads. The 32GB capacity paired with DDR5-5600 speed delivers the bandwidth and reliability required for next-generation data center deployments. Operating across the standard commercial server temperature range of 0°C to 85°C, this module provides thermal headroom for dense rack configurations. Whether you are refreshing legacy memory infrastructure or deploying greenfield Xeon or EPYC clusters, the Samsung part number M321R4GA0PB0-CWMXJ offers proven compatibility and enterprise-grade resilience. Contact Omnixon Global for an RFQ on this memory module.

Key Specifications

  • Manufacturer: Samsung
  • Capacity: 32GB
  • Memory Type: DDR5 SDRAM
  • Speed Grade: DDR5-5600 (PC5-44800)
  • Module Type: Registered (Buffered) ECC with On-Die ECC
  • Form Factor: 288-pin RDIMM, 2Rx4 Dual Rank, x4 organization
  • Operating Voltage: 1.1V
  • Operating Temperature Range: 0°C to 85°C

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAM-M321R4GA0PB0-CWMXJ
Part NumberM321R4GA0PB0-CWMXJ
ConditionNew
Capacity32GB
Form FactorRDIMM
InterfaceDDR5
Speed5600 MT/s
Manufacturer Part NumberM321R4GA0PB0-CWMXJ
Capacity32GB
Memory TypeDDR5 SDRAM
Form Factor288-pin RDIMM
Module TypeRegistered (Buffered) ECC
Speed GradeDDR5-5600
PC RatingPC5-44800
Operating Voltage1.1V
ECCYes (Error Correcting Code)
Ranks2Rx4 (Dual Rank, x4 organization)
On-Die ECCYes
DRAM Process Node1b-nm class
Interface Width64-bit data bus (72-bit with ECC)
Pin Count288-pin
JEDEC ComplianceJEDEC DDR5 RDIMM standard
SPDProgrammed per JEDEC SPD specification
Compatible PlatformsIntel Xeon Scalable (Sapphire Rapids+), AMD EPYC (DDR5-capable generations)
Operating Temperature0°C to 85°C (standard commercial/server range)

Frequently Asked Questions about Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM

What does the Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM do?

The Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM is enterprise RDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM?

Key specifications for the Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM: capacity 32GB; form factor RDIMM; interface DDR5; new condition; capacity 32GB; memory type DDR5-5600; module type ECC RDIMM; use case Servers, workstations, and enterprise platforms. Manufacturer part number M321R4GA0PB0-CWMXJ. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM compatible with my infrastructure?

The Samsung M321R4GA0PB0-CWMXJ 32GB DDR5-5600 ECC RDIMM fits RDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.