Samsung HBM3E 8-Hi 24GB (Shinebolt)

The Samsung HBM3E 8-Hi 24GB (Shinebolt), manufactured under part number H5CG48AFBDX018, represents Samsung's fifth-generation High Bandwidth Memory implementation, built on the HBM3E specification to deliver exceptional memory bandwidth and capacity density for the most demanding compute workloads. The 8-Hi stack architecture integrates eight DRAM dies vertically interconnected through through-silicon via (TSV) technology, achieving 24GB of capacity per package with a 1024-bit wide interface that enables memory bandwidth exceeding 1.2 TB/s per stack. This architecture is purpose-engineered for direct integration with AI accelerators, GPU compute dies, and custom ASICs via advanced packaging techniques including 2.5D interposer-based designs.

Shinebolt leverages Samsung's advanced DRAM process node and refined TSV interconnect engineering to improve power efficiency and signal integrity compared to prior HBM generations. The 1024-bit bus width, operating at HBM3E data rates, provides the ultra-low latency and extremely high sustained throughput required by transformer-based large language model (LLM) inference and training, scientific simulation, and high-performance computing (HPC) applications where memory bandwidth is the primary bottleneck. The device is designed for operation within the tight thermal and power envelopes mandated by modern AI compute platforms.

As a component-level memory product, the Samsung HBM3E 8-Hi 24GB is procured and integrated by system, accelerator card manufacturers, and hyperscale datacenter operators building next-generation AI training clusters and inference platforms. Omnixon Global supplies this component to enterprise and industrial buyers across the UAE, GCC, EMEA, and APAC regions, supporting procurement pipelines for AI infrastructure buildouts requiring verified, Samsung HBM3E memory stacks.

Ideal for

• Large language model (LLM) training and inference acceleration on HBM3E-equipped GPU and AI accelerator platforms requiring maximum memory bandwidth per compute die
• Hyperscale datacenter AI cluster deployment where 24GB per stack capacity enables larger model parameter sets to reside on-chip without PCIe-bound host memory offloading
• High-performance computing (HPC) workloads including computational fluid dynamics, molecular dynamics simulation, and seismic processing that are bandwidth-bound on conventional GDDR or DDR memory subsystems
• Custom ASIC and AI accelerator card manufacturing by integrating HBM3E stacks via 2.5D silicon interposer packaging for edge AI inference appliances and datacenter accelerator boards
• Computer vision and multimodal AI inference platforms processing high-resolution image and video streams at scale, where sustained memory bandwidth directly constrains throughput
• Government, defense, and research HPC procurement requiring Samsung-sourced HBM3E components with verified part numbers for integration into sovereign AI and scientific computing infrastructure

Technical specifications

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.