Brand: Samsung | Category: Memory (RAM)
SKU: M425R2GA3BB0-CWMOD | Part #: M425R2GA3BB0-CWMOD | MPN: M425R2GA3BB0-CWMOD
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The Samsung DDR5-6400 16GB SODIMM (M425R2GA3BB0-CWMOD) is built on Samsung's advanced 12nm-class process node, delivering a substantial leap in memory bandwidth and power efficiency over preceding DDR4 generations. Operating at 6400 MT/s with a 262-pin SODIMM form factor, this module is engineered to meet the demands of high-throughput computing in compact and mobile enterprise platforms, including next-generation laptops, mini workstations, and edge computing nodes that require both performance density and thermal restraint.
DDR5 architecture introduces on-die ECC (ODECC) as a standard feature, providing an additional layer of data integrity at the silicon level before system-level ECC is applied. The module operates at 1.1V, reducing power draw compared to DDR4's 1.2V baseline while sustaining significantly higher transfer rates. The dual 32-bit sub-channel design native to DDR5 improves memory controller efficiency and enables finer-grained access patterns, a characteristic particularly beneficial for AI inference, in-memory analytics, and virtualization workloads that depend on low-latency, high-concurrency memory access.
As part of Samsung's enterprise-grade SODIMM lineup, the M425R2GA3BB0-CWMOD is positioned for procurement by IT teams, system integrators, and infrastructure operators across UAE, GCC, EMEA, and APAC markets through Omnixon Global. Its 12nm-class fabrication underpins improved yield consistency and long-term reliability, making it a sound selection for fleet deployments, edge AI nodes, and professional mobile workstations where sustained performance under continuous operation is a procurement priority.
| Manufacturer | Samsung |
| Manufacturer Part Number | M425R2GA3BB0-CWMOD |
| Memory Type | DDR5 SDRAM |
| Capacity | 16GB |
| Form Factor | SODIMM |
| Pin Count | 262-pin |
| Speed Grade | DDR5-6400 |
| Transfer Rate | 6400 MT/s |
| Operating Voltage | 1.1V |
| Process Node | 12nm-class |
| Data Integrity | On-Die ECC (ODECC) |
| Channel Architecture | Dual 32-bit sub-channels |
| Ranks | Single Rank |
| Die Configuration | 2Gx64 |
| CAS Latency | CL46 |
| Timings | 46-45-45 |
| Module Height | Low-profile SODIMM standard |
Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | M425R2GA3BB0-CWMOD |
| Part Number | M425R2GA3BB0-CWMOD |
| Condition | New |
| Manufacturer Part Number | M425R2GA3BB0-CWMOD |
| Memory Type | DDR5 SDRAM |
| Capacity | 16GB |
| Form Factor | SODIMM |
| Pin Count | 262-pin |
| Speed Grade | DDR5-6400 |
| Transfer Rate | 6400 MT/s |
| Operating Voltage | 1.1V |
| Process Node | 12nm-class |
| Data Integrity | On-Die ECC (ODECC) |
| Channel Architecture | Dual 32-bit sub-channels |
| Ranks | Single Rank |
| Die Configuration | 2Gx64 |
| CAS Latency | CL46 |
| Timings | 46-45-45 |
| Module Height | Low-profile SODIMM standard |
Part number M425R2GA3BB0-CWMOD is qualified for Samsung servers that list compatible memory in their QVL. We verify QVL match before quoting — share your server model in the RFQ and our pre-sales engineers confirm fit, recommended population pattern, and total capacity supported.
Submit the RFQ form on this page with your quantity and destination country. Our pre-sales team responds with a vendor-confirmed quote, availability, and matching server-QVL confirmation if needed.