Samsung HBM3E 16-Hi 36GB (Shinebolt)

Samsung HBM3E 16-Hi 36GB (Shinebolt)

Brand: Samsung | Category: Memory (RAM)

SKU: H5CG32AFBDX018 | Part #: H5CG32AFBDX018 | MPN: H5CG32AFBDX018

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About the Samsung HBM3E 16-Hi 36GB (Shinebolt)

The Samsung HBM3E 16-Hi 36GB (Shinebolt), part number H5CG32AFBDX018, represents the most advanced High Bandwidth Memory available from Samsung, built on the HBM3E (High Bandwidth Memory Express) standard. This 16-layer stacked die configuration achieves a total capacity of 36GB per package, utilizing through-silicon via (TSV) interconnect technology to deliver extraordinary memory bandwidth far exceeding conventional GDDR or DDR memory solutions. The Shinebolt designation marks Samsung's second-generation HBM3E product line, engineered specifically for the most demanding compute-intensive environments where both capacity and bandwidth are critical constraints.

Operating within the HBM3E specification, the Shinebolt stack delivers bandwidth of up to 1.28 TB/s per package, enabled by a 1024-bit wide memory bus interface. The 16-Hi stack architecture pushes per-package capacity to 36GB, a significant leap over earlier 12-Hi HBM3E configurations, addressing the memory capacity requirements of large language model (LLM) inference and training workloads where model weights and activation states must reside in on-package memory. The device interfaces with host processors and accelerators via an interposer-based 2.5D packaging approach, making it the foundational memory component for next-generation AI accelerators and high-performance computing processors.

Designed for integration into enterprise AI accelerators, HPC processors, and datacenter-grade compute platforms, the Samsung HBM3E 16-Hi 36GB is procured as a component by system and platform integrators rather than as a standalone upgradeable module. Its adoption in accelerators deployed across hyperscale datacenters, AI supercomputing clusters, and scientific research facilities reflects its status as the current apex of production HBM technology. Omnixon Global supplies this component to enterprise, datacenter, and government buyers across the UAE, GCC, EMEA, and APAC regions.

Ideal for

  • Large language model (LLM) training and inference on AI accelerators requiring maximum on-package memory bandwidth and capacity for billion-parameter model weights
  • High-performance computing (HPC) and scientific simulation workloads such as computational fluid dynamics, molecular dynamics, and climate modeling that are bandwidth-bound
  • Generative AI and multimodal AI inference deployments in hyperscale and enterprise datacenter GPU clusters where memory capacity directly limits batch size and throughput
  • Deep learning recommendation model (DLRM) serving, where large embedding tables benefit from the high bandwidth and 36GB per-package capacity to reduce off-package memory accesses
  • AI supercomputing node builds and accelerator card manufacturing requiring the highest-tier HBM3E stack for next-generation compute platforms
  • Memory-intensive graph analytics, sparse linear algebra, and data analytics acceleration workloads where irregular memory access patterns demand maximum sustainable bandwidth

Technical specifications

ManufacturerSamsung
Manufacturer Part NumberH5CG32AFBDX018
Product NameSamsung HBM3E 16-Hi 36GB (Shinebolt)
Memory StandardHBM3E (High Bandwidth Memory Express)
Stack Configuration16-Hi (16-layer die stack)
Capacity per Package36 GB
Memory Bus Width1024-bit
Memory BandwidthUp to 1.28 TB/s per package
InterfaceHBM3E (interposer / 2.5D packaging compatible)
Through-Silicon Via (TSV)Yes
ECC SupportYes (on-die ECC)
Form FactorHBM package (not a DIMM; requires interposer integration)
Supply Voltage (VDD)1.1 V
Operating Temperature0°C to 95°C (junction, active)
ApplicationAI accelerators, HPC processors, datacenter compute SoCs
GenerationHBM3E (2nd generation HBM3E / Shinebolt)
Stacking TechnologyThrough-Silicon Via (TSV) with micro-bump interconnects

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUH5CG32AFBDX018
Part NumberH5CG32AFBDX018
ConditionNew
Manufacturer Part NumberH5CG32AFBDX018
Product NameSamsung HBM3E 16-Hi 36GB (Shinebolt)
Memory StandardHBM3E (High Bandwidth Memory Express)
Stack Configuration16-Hi (16-layer die stack)
Capacity per Package36 GB
Memory Bus Width1024-bit
Memory BandwidthUp to 1.28 TB/s per package
InterfaceHBM3E (interposer / 2.5D packaging compatible)
Through-Silicon Via (TSV)Yes
ECC SupportYes (on-die ECC)
Form FactorHBM package (not a DIMM; requires interposer integration)
Supply Voltage (VDD)1.1 V
Operating Temperature0°C to 95°C (junction, active)
ApplicationAI accelerators, HPC processors, datacenter compute SoCs
GenerationHBM3E (2nd generation HBM3E / Shinebolt)
Stacking TechnologyThrough-Silicon Via (TSV) with micro-bump interconnects

Frequently Asked Questions about Samsung HBM3E 16-Hi 36GB (Shinebolt)

Is the Samsung HBM3E 16-Hi 36GB (Shinebolt) compatible with my server?

Part number H5CG32AFBDX018 is qualified for Samsung servers that list compatible memory in their QVL. We verify QVL match before quoting — share your server model in the RFQ and our pre-sales engineers confirm fit, recommended population pattern, and total capacity supported.

What support applies to this memory module?

Full manufacturer support (typically 3 years, RDIMM/LRDIMM SKUs often lifetime against manufacturing defects). All product is sourced through distribution so support registers cleanly under your company name.

How do I request a quote?

Submit the RFQ form on this page with your quantity and destination country. Our pre-sales team responds with a vendor-confirmed quote, availability, and matching server-QVL confirmation if needed.