Brand: Samsung | Category: Memory (RAM)
SKU: M321RYA0PB2-CCP | Part #: M321RYA0PB2-CCP | MPN: M321RYA0PB2-CCP
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The Samsung DDR5 96GB RDIMM Module (M321RYA0PB2-CCP) represents Samsung's latest generation of enterprise-grade server memory, purpose-built for the demands of modern data centres, cloud infrastructure, and high-performance computing environments. As organisations across the GCC and globally accelerate their digital transformation initiatives — spanning AI/ML workloads, real-time analytics, and dense virtualisation — the need for higher-capacity, lower-latency, and more power-efficient memory has never been more critical. Samsung's DDR5 RDIMM platform answers this need with a substantial leap in bandwidth, capacity density, and signal integrity over its DDR4 predecessors.
Part number M321RYA0PB2-CCP is a 96GB Registered Dual In-Line Memory Module (RDIMM) operating on the DDR5 standard. It features on-die ECC (Error-Correcting Code) as well as traditional DRAM ECC, providing two layers of data integrity protection that are essential in mission-critical server deployments. The registered (buffered) architecture of this RDIMM ensures electrical stability and scalability across high-DIMM-count configurations, making it a top choice for OEM platforms from Dell, HPE, Lenovo, Supermicro, and other tier-1 server manufacturers.
For enterprise IT procurement teams, data centre architects, and cloud service providers in the UAE and broader GCC region, the Samsung M321RYA0PB2-CCP delivers a future-proof memory investment that aligns with the transition to Intel Xeon Scalable (Sapphire Rapids / Emerald Rapids) and AMD EPYC (Genoa / Bergamo) server processor families — all of which natively support DDR5 memory.
The Samsung M321RYA0PB2-CCP is built around Samsung's proprietary DDR5 SDRAM die stack, manufactured using EUV photolithography for superior density and yield. The module organises its 96GB of capacity using high-density x4 or x8 DRAM organisation across multiple ranks, allowing the memory controller to access a broader data width simultaneously.
The RDIMM register component — a Register Clock Driver (RCD) compliant with JEDEC RCD14 specification — manages command and address signal re-driving from the host memory controller to each DRAM rank. This buffering reduces the electrical load on the CPU's memory interface, allowing stable operation at rated DDR5 speeds even with multiple DIMMs installed per channel. The RCD also incorporates the SPD (Serial Presence Detect) hub via the DDR5-standard SPD5 interface, enabling the host BIOS to auto-configure memory timings, voltage, and topology settings on server power-up.
DDR5 introduces a redesigned power management architecture: each DIMM now contains an on-module PMIC (Power Management Integrated Circuit) that regulates the memory supply voltages locally, reducing motherboard power plane complexity and enabling more precise per-module voltage control. This is a key DDR5 architectural advancement that improves both efficiency and stability in dense, multi-DIMM server configurations.
The Samsung DDR5 96GB RDIMM M321RYA0PB2-CCP operates at a base speed of 4800 MT/s (JEDEC default), with OEM platform support for speeds up to 5600 MT/s depending on server BIOS and memory topology. At 4800 MT/s with a 64-bit data bus width per sub-channel (two sub-channels per DIMM), the theoretical peak bandwidth per module reaches approximately 38.4 GB/s — nearly double the 25.6 GB/s peak of comparable DDR4-3200 RDIMMs.
Memory access latency, while measured in nanoseconds, is tightly controlled by the DDR5 architecture. At 4800 MT/s with CL40 timings (typical JEDEC DDR5-4800B profile), the absolute latency is approximately 16.67 ns per cycle — comparable to DDR4 at equivalent speeds, and further masked by the much higher bandwidth available for prefetching and burst transfers in real workloads.
With 96GB per DIMM, a dual-socket server with 16 DIMM slots (8 per CPU) can achieve 1,536 GB (1.5TB) of total system memory, while a 32-DIMM slot platform reaches 3,072 GB (3TB) — enabling in-memory computing scenarios that were previously impractical with DDR4 density constraints. This capacity headroom is transformative for SAP HANA, Oracle TimesTen, Redis large caches, and Hadoop/Spark in-memory analytics clusters.
The Samsung M321RYA0PB2-CCP is designed for compatibility with enterprise server platforms based on:
The Samsung 96GB DDR5 RDIMM is the memory module of choice across a diverse range of enterprise and hyperscale computing scenarios:
Omnixon Global is a trusted B2B IT hardware distributor headquartered in Dubai, UAE, serving enterprise clients across the GCC, Middle East, Africa, and global markets. When sourcing Samsung DDR5 memory modules such as the M321RYA0PB2-CCP, enterprise procurement teams benefit from working with a specialised distributor that understands the unique requirements of regional data centre deployments.
Omnixon maintains dedicated inventory of enterprise server memory from leading manufacturers including Samsung, Micron, SK Hynix, and Kingston — ensuring that high-demand DDR5 RDIMM modules are available for volume purchases without extended lead times that often affect direct OEM procurement channels. Our team of certified hardware specialists can assist with compatibility validation against your specific server BOM (Bill of Materials), multi-unit volume quotes, and configuration planning for memory upgrades across entire server fleets.
Operating from Dubai, Omnixon is strategically positioned to serve enterprise clients in Saudi Arabia, the UAE, Qatar, Kuwait, Bahrain, Oman, Egypt, and beyond — with deep expertise in navigating regional import requirements, customs documentation, and enterprise IT procurement frameworks including government and semi-government tenders across the GCC.
Complement your Samsung DDR5 RDIMM deployment with these related products available from Omnixon Global:
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | M321RYA0PB2-CCP |
| Part Number | M321RYA0PB2-CCP |
| Condition | New |
| Module Type | RDIMM (Registered ECC) |
| Memory Generation | DDR5 |
| Capacity | 96 GB |
| Memory Speed | 4800 MT/s (JEDEC) / Up to 5600 MT/s (OEM XMP/EXPO) |
| Theoretical Peak Bandwidth | ~38.4 GB/s per module at 4800 MT/s |
| CAS Latency (CL) | CL40 (DDR5-4800B JEDEC profile) |
| tRCD | 40 cycles |
| tRP | 40 cycles |
| Absolute Latency | ~16.67 ns at 4800 MT/s |
| DRAM Technology | Samsung DDR5 SDRAM (EUV Lithography) |
| Module Organisation | 2Rx4 (Dual Rank, x4 DRAM width) |
| Sub-Channel Architecture | Dual 32-bit sub-channels per DIMM (DDR5 native) |
| Register Type | RCD (Register Clock Driver) — JEDEC RCD14 compliant |
| SPD Interface | SPD5 Hub (DDR5 standard) |
| Power Management | On-module PMIC (Power Management IC) |
| Error Correction | On-Die ECC + SECDED DRAM ECC (Dual-layer) |
| Form Factor | 288-pin DIMM (RDIMM) |
| Module Height | Standard height (31.25 mm) |
| PCB Layers | Multi-layer enterprise-grade PCB |
| Operating Voltage | 1.1V (VDD / VDDQ) |
| Typical Power Consumption | ~8–12W (active, workload dependent) |
| Idle Power Consumption | ~3–5W (self-refresh mode) |
| Supported CPU Platforms | Intel Xeon Scalable 4th Gen (Sapphire Rapids), 5th Gen (Emerald Rapids); AMD EPYC 4th Gen (Genoa/Genoa-X), 5th Gen (Turin) |
| Compatible Server Families | Dell PowerEdge R760/R860/R960, HPE ProLiant DL380 Gen11/DL560 Gen11/DL385 Gen11, Lenovo ThinkSystem SR650 V3/SR850 V3/SR665 V3, Supermicro X13 Series |
| Operating System Support | Windows Server 2019/2022, RHEL 8/9, SLES 15, VMware vSphere 7.x/8.x, Ubuntu Server 20.04/22.04 LTS |
| JEDEC Standard | JEDEC JESD79-5 DDR5 |
| Operating Temperature | 0°C to 85°C (case temperature) |
| Storage Temperature | -40°C to 95°C |
| Operating Humidity | 5% to 95% RH (non-condensing) |
| MTBF | >43,800 hours (5 years continuous operation) |
| Compliance | RoHS 2.0 compliant, CE marked, FCC Class B, JEDEC DDR5 certified |
| Manufacturing Standards | ISO 9001 Quality Management, ISO 14001 Environmental Management |