Micron 256GB DDR5-5600 ECC RDIMM (3DS)

The Micron 256GB DDR5-5600 ECC RDIMM (3DS), part number MTC80F216SB1RC56BB, is a three-dimensional stacked registered dual in-line memory module engineered to deliver extreme capacity within a single DIMM slot. Built on Micron's 3DS (Three-Dimensional Stacking) architecture, the module stacks multiple DRAM dies vertically and connects them through a logic die, allowing 256GB of addressable memory while maintaining the physical and electrical footprint of a standard RDIMM. Operating at DDR5-5600 MT/s with registered buffering and on-die ECC plus module-level ECC, it provides the signal integrity and error-correction required for mission-critical server deployments.

Designed for dual-socket and multi-socket platforms based on Intel Xeon Scalable (Sapphire Rapids and successors) and AMD EPYC processors that support DDR5 and 3DS RDIMMs, this module enables system-level memory configurations reaching into the terabyte range. The 5600 MT/s data rate sustains high memory bandwidth for workloads that are both capacity- and throughput-sensitive. The RCD (Registering Clock Driver) on the module isolates the memory bus from the processor's memory controller, allowing stable operation at high capacities that would otherwise degrade signal integrity on unregistered or standard RDIMM topologies.

The MTC80F216SB1RC56BB is particularly well-suited to large language model inference and training hosts, in-memory relational and analytical databases, high-performance virtual machine density consolidation, and real-time analytics engines. In each of these scenarios the fundamental constraint is addressable memory per socket, and 3DS RDIMMs allow operators to maximize that ceiling without adding sockets, chassis, or interconnect fabric. Micron's mature 3DS manufacturing process and full DDR5 ECC implementation make this module appropriate for continuous-duty enterprise and hyperscale deployments.

Ideal for

• Large language model (LLM) inference servers requiring multi-terabyte memory footprints to hold model weights and KV caches entirely in DRAM, eliminating NVMe swap latency
• In-memory OLTP and OLAP database hosts (SAP HANA, Oracle In-Memory, Redis Enterprise) where entire working datasets must reside in main memory to meet sub-millisecond SLA targets
• High-density VMware vSphere or Red Hat OpenShift virtualization hosts maximizing vRAM per socket to increase VM consolidation ratios without scaling out physical nodes
• Real-time streaming analytics platforms (Apache Flink, MemSQL/SingleStore) that buffer high-throughput event streams in memory before writing to persistent storage tiers
• AI/ML training pipeline nodes where large batch sizes and embedding tables demand sustained high-capacity, high-bandwidth memory to keep GPU/accelerator feed pipelines fully utilized
• Scientific computing and HPC simulation workloads (computational fluid dynamics, genomics assembly) with memory footprints that exceed standard RDIMM capacity limits per socket

Technical specifications

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.