Samsung 64GB DDR5-5600 RDIMM ECC Registered

Samsung 64GB DDR5-5600 RDIMM ECC Registered

Brand: Samsung | Category: Memory (RAM)

SKU: M321R8GA0BB0-CWM | Part #: M321R8GA0BB0-CWM | MPN: M321R8GA0BB0-CWM

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About the Samsung 64GB DDR5-5600 RDIMM ECC Registered

The Samsung 64GB DDR5-5600 RDIMM ECC Registered (M321R8GA0BB0-CWM) is a high-capacity registered dual in-line memory module engineered for the demands of modern server and workstation platforms. Built on Samsung's advanced DRAM process technology, this module operates at DDR5-5600 MT/s with a 288-pin interface and delivers a 64-bit data bus width with ECC protection via the registered (RCD) buffer architecture. The 1Rx4 single-rank organization using x4 DRAM devices maximizes per-slot density while maintaining signal integrity across multi-slot configurations. On-die ECC (ODECC) inherent to DDR5 adds a first layer of data correction within each DRAM die, complementing the module-level ECC that server platforms rely on for continuous operation.

This module is specifically validated for Intel Xeon Scalable 5th Generation (Emerald Rapids) and AMD EPYC 9004 Series (Genoa/Turin) processors, both of which natively support DDR5 at speeds up to 5600 MT/s per channel. The 2Rx4 64GB configuration enables high-bandwidth, high-capacity memory subsystems when paired across the multiple memory channels present in these dual-socket enterprise platforms. Operating at 1.1V, DDR5's reduced supply voltage compared to DDR4 contributes to improved energy efficiency per gigabyte of capacity, a meaningful factor in high-density rack deployments running memory-intensive workloads around the clock.

As a Samsung original component carrying the M321 server RDIMM product line designation, the M321R8GA0BB0-CWM is suited to large-scale enterprise deployments where memory capacity, bandwidth, and data integrity are non-negotiable. The module's JEDEC-compliant DDR5 RDIMM form factor ensures broad compatibility with server platforms from major brands supporting the standard. High sustained demand across the Emerald Rapids and EPYC Turin install base, combined with the broader industry ramp of DDR5 server infrastructure, has made this capacity point a critical procurement consideration for IT planners building out or refreshing data center memory configurations.

Ideal for

  • In-memory database acceleration: deploying 64GB RDIMMs across all available channels in dual-socket Emerald Rapids or EPYC Turin servers maximizes the addressable in-memory dataset for platforms such as SAP HANA, Redis, or Oracle TimesTen, reducing storage I/O dependency.
  • Virtualization host memory expansion: VMware vSphere or Microsoft Hyper-V hosts benefit from high per-slot capacity to support large numbers of concurrent virtual machines with meaningful per-VM memory allocations without requiring additional physical servers.
  • High-performance computing and simulation: multi-physics simulation, computational fluid dynamics, and finite-element analysis workloads with large working sets exploit the increased bandwidth and capacity offered by fully populated DDR5-5600 memory configurations.
  • AI and machine learning inference infrastructure: large language model inference servers and batch inferencing pipelines require substantial CPU-attached memory to stage model weights and batches; DDR5-5600 bandwidth helps sustain throughput for CPU-based inference workloads.
  • Enterprise data warehouse and analytics: columnar analytics engines and MPP databases running on-premises benefit from the combination of high capacity and DDR5 memory bandwidth when processing large aggregation and scan queries across wide tables.
  • Cloud-native and containerized workloads: Kubernetes worker nodes running memory-intensive microservices or JVM-based workloads gain headroom from 64GB modules, reducing node count requirements and improving pod density in private cloud infrastructure.

Technical specifications

ManufacturerSamsung
Manufacturer Part NumberM321R8GA0BB0-CWM
Module TypeRDIMM (Registered ECC)
Capacity64GB
DDR GenerationDDR5
Speed GradeDDR5-5600 (5600 MT/s)
Form Factor288-pin DIMM
Data Bus Width64-bit (72-bit with ECC)
Rank Configuration2Rx4 (Dual Rank, x4 organization)
Module Voltage1.1V
ECC SupportECC Registered (RCD); On-Die ECC (ODECC) per DDR5 specification
CAS LatencyCL46
Primary Timings46-45-45
Operating Temperature0°C to 85°C (standard; RDIMM enterprise specification)
CompatibilityIntel Xeon Scalable 5th Gen (Emerald Rapids); AMD EPYC 9004/9005 Series (Genoa/Turin)
JEDEC ComplianceJEDEC DDR5 RDIMM standard
Launch QuarterQ4 2023

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUM321R8GA0BB0-CWM
Part NumberM321R8GA0BB0-CWM
ConditionNew
Manufacturer Part NumberM321R8GA0BB0-CWM
Module TypeRDIMM (Registered ECC)
Capacity64GB
DDR GenerationDDR5
Speed GradeDDR5-5600 (5600 MT/s)
Form Factor288-pin DIMM
Data Bus Width64-bit (72-bit with ECC)
Rank Configuration2Rx4 (Dual Rank, x4 organization)
Module Voltage1.1V
ECC SupportECC Registered (RCD); On-Die ECC (ODECC) per DDR5 specification
CAS LatencyCL46
Primary Timings46-45-45
Operating Temperature0°C to 85°C (standard; RDIMM enterprise specification)
CompatibilityIntel Xeon Scalable 5th Gen (Emerald Rapids); AMD EPYC 9004/9005 Series (Genoa/Turin)
JEDEC ComplianceJEDEC DDR5 RDIMM standard
Launch QuarterQ4 2023