SK Hynix 128GB DDR5-5600 RDIMM 4Rx4 ECC

The SK Hynix 128GB DDR5-5600 RDIMM (HMCG18MEBRA174N) represents the leading edge of mainstream server memory capacity in the DDR5 generation, employing a 4-rank, 4-die-per-package (4Rx4) configuration to achieve 128GB on a single dual-inline memory module. Built on SK Hynix's advanced 1b-nm DRAM process node, the module uses Through-Silicon Via (TSV) stacking technology to achieve the die density required for this capacity class. The registered buffered (RDIMM) architecture offloads address and command signal loading from the host memory controller through an on-module Register Clock Driver (RCD), enabling reliable high-speed operation at DDR5-5600 (PC5-44800) across multi-DIMM-per-channel configurations in certified enterprise platforms.

The module operates at 1.1V and delivers a peak transfer rate of 44,800 MB/s per slot, leveraging DDR5's on-die ECC (ODECC) at the DRAM level in addition to the module-level ECC visible to the host system. The 4Rx4 topology provides maximum per-slot capacity at the accepted trade-off of reduced maximum supported operating frequency compared to lower-rank configurations; platform support and validated operating speeds must be confirmed against specific server vendor QVL documentation. The 288-pin DDR5 connector and JEDEC-standard SPD/EEPROM with integrated humidity and temperature sensors (TS) support full platform manageability features including in-band and out-of-band thermal monitoring.

Introduced in Q3 2023, the HMCG18MEBRA174N targets enterprise infrastructure deployments where aggregate memory capacity per server node is the primary constraint—particularly large-language-model inference servers, in-memory analytics appliances, and high-performance computing nodes where minimizing the number of populated DIMM slots while maximizing total addressable memory is operationally critical. Allocation of this capacity tier remains constrained, reflecting its position at the top of the DDR5 RDIMM density curve and the elevated complexity of volume production at 128GB.

Ideal for

• Large-language-model (LLM) inference servers requiring maximum per-node memory capacity to hold multi-billion-parameter model weights entirely in DRAM
• High-performance computing (HPC) cluster nodes running memory-bound simulation workloads in computational fluid dynamics, molecular dynamics, or finite-element analysis
• In-memory database appliances (e.g., SAP HANA, Redis Enterprise) where the entire active dataset must reside in DRAM to meet sub-millisecond latency SLAs
• Virtualization hosts maximizing VM density per 2-socket server by populating fewer slots with maximum-capacity DIMMs to preserve airflow and power headroom
• AI/ML training preprocessing nodes that stage and shuffle large datasets in memory before feeding GPU accelerators, reducing PCIe and storage I/O bottlenecks
• Real-time analytics and complex event-processing platforms that aggregate high-velocity telemetry streams requiring multi-terabyte aggregate memory configurations across a server rack

Technical specifications

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.