Brand: Samsung | Category: Enterprise SSDs
SKU: MZ-V9S1T0BW | Part #: MZ-V9S1T0BW | MPN: MZ-V9S1T0BW
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The Samsung 990 EVO Plus 1TB (part number MZ-V9S1T0BW) is an internal NVMe SSD in the M.2 2280 (22 x 80 mm) form factor. It uses a PCI Express 4.0 interface with NVMe 2.0 and is built on V-NAND TLC memory, providing 1 TB of storage capacity.
Rated sequential speeds are up to 7150 MB/s read and 6300 MB/s write, with random 4KB performance of 850,000 IOPS read and 1,350,000 IOPS write. The drive supports hardware encryption with 256-bit AES, along with S.M.A.R.T. monitoring, TRIM and DevSlp (device sleep). Power consumption is 0.06 W at idle and 5 mW in device sleep, and the rated MTBF is 1,500,000 hours.
Designed as a component for PCs, this SSD suits desktop and workstation builds that use M.2 NVMe storage for operating systems, applications and data that benefit from fast access.
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| Brand | Samsung |
| Category | Enterprise SSDs |
| SKU | MZ-V9S1T0BW |
| Part Number | MZ-V9S1T0BW |
| Condition | New |
| Mean time between failures (MTBF) | 1500000 h |
| S.M.A.R.T. support | Yes |
| TRIM support | Yes |
| DevSlp (device sleep) support | Yes |
| Random write (4KB) | 1350000 IOPS |
| Random read (4KB) | 850000 IOPS |
| Write speed | 6300 MB/s |
| Read speed | 7150 MB/s |
| M.2 SSD size | 2280 (22 x 80 mm) |
| Hardware encryption | Yes |
| Component for | PC |
| Memory type | V-NAND TLC |
| NVMe | Yes |
| Interface | PCI Express 4.0 |
| SSD form factor | M.2 |
| SSD capacity | 1 TB |
| Security algorithms | 256-bit AES |
| NVMe version | 2.0 |
| Power consumption DevSlp (device sleep) | 5 mW |
| Power consumption (idle) | 0.06 W |
| Average power consumption (read) | 4.3 W |
| Average power consumption (write) | 4.2 W |
| Power consumption (write) | 4.2 W |
| Power consumption (read) | 4.3 W |
| Operating voltage | 3.3 V |
| Operating shock | 1500 G |
| Operating temperature (T-T) | 0 - 70 °C |
| Weight | 9 g |
| Height | 80.2 mm |
| Depth | 2.38 mm |
| Width | 80.2 mm |
the Samsung (990 EVO Plus) 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6300W MB/s suits enterprise data-center storage tiers — all-flash arrays, hyperconverged storage pools (vSAN, Ceph), database backends, and high-throughput backup repositories. It is supported by major server platforms.
Key specifications for the Samsung (990 EVO Plus) 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6300W MB/s: new condition; mean time between failures (mtbf) 1500000 h; s.m.a.r.t. support Yes; trim support Yes; devslp (device sleep) support Yes; random write (4kb) 1350000 IOPS; random read (4kb) 850000 IOPS. Manufacturer part number MZ-V9S1T0BW. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.
