Samsung 990 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6450W MB/s

Samsung 990 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6450W MB/s

Brand: Samsung | Category: Enterprise SSDs

SKU: MZ-V9V1T0BW | Part #: MZ-V9V1T0BW | MPN: MZ-V9V1T0BW

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About the Samsung 990 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6450W MB/s

The Samsung 990 1TB (part number MZ-V9V1T0BW) is an internal M.2 2280 (22 x 80 mm) solid state drive using V-NAND memory and the NVMe 2.0 protocol over a PCI Express 4.0 x4 interface. It is rated for sequential read speeds of 7150 MB/s and write speeds of 6450 MB/s, with 4KB random read performance of 700,000 IOPS and random write performance of 1,100,000 IOPS.

The drive supports hardware encryption with 256-bit AES and TCG Opal 2.0. It also supports S.M.A.R.T. monitoring, TRIM and DevSlp (device sleep), and has a rated mean time between failures (MTBF) of 1,500,000 hours.

Designed as a component for PCs, this 1 TB SSD suits desktop and workstation systems with an M.2 slot that need fast local storage for the operating system, applications and working data.

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Technical Specifications

BrandSamsung
CategoryEnterprise SSDs
SKUMZ-V9V1T0BW
Part NumberMZ-V9V1T0BW
ConditionNew
Mean time between failures (MTBF)1500000 h
S.M.A.R.T. supportYes
TRIM supportYes
DevSlp (device sleep) supportYes
PCI Express CEM revision4.0
PCI Express interface data lanesx4
Random write (4KB)1100000 IOPS
Random read (4KB)700000 IOPS
Write speed6450 MB/s
Read speed7150 MB/s
M.2 SSD size2280 (22 x 80 mm)
Hardware encryptionYes
Component forPC
Memory typeV-NAND
NVMeYes
InterfacePCI Express 4.0
SSD form factorM.2
SSD capacity1 TB
Security algorithms256-bit AES, TCG Opal 2.0
NVMe version2.0
Power consumption DevSlp (device sleep)3 mW
Power consumption (idle)0.055 W
Power consumption (write)3.7 W
Power consumption (read)4 W
Operating voltage3.3 V
Operating shock1500 G
Operating temperature (T-T)0 - 70 °C
Height22.1 mm
Depth2.38 mm
Width80.2 mm

Frequently Asked Questions about Samsung 990 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6450W MB/s

What does the Samsung 990 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6450W MB/s do?

the Samsung 990 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6450W MB/s suits enterprise data-center storage tiers — all-flash arrays, hyperconverged storage pools (vSAN, Ceph), database backends, and high-throughput backup repositories. It is supported by major server platforms.

What are the headline specs of the Samsung 990 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6450W MB/s?

Key specifications for the Samsung 990 1TB, M.2 Internal NVMe PCIe4 SSD, 7150R/6450W MB/s: new condition; mean time between failures (mtbf) 1500000 h; s.m.a.r.t. support Yes; trim support Yes; devslp (device sleep) support Yes; pci express cem revision 4.0; pci express interface data lanes x4. Manufacturer part number MZ-V9V1T0BW. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.