(990 EVO PLUS) 2TB, M.2 INTERNAL NVMe PCIe4 SSD, 7250R/6300W MB/s

(990 EVO PLUS) 2TB, M.2 INTERNAL NVMe PCIe4 SSD, 7250R/6300W MB/s

Brand: Samsung | Category: Accessories & Components

SKU: MZ-V9S2T0BW | Part #: MZ-V9S2T0BW | MPN: MZ-V9S2T0BW

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About the (990 EVO PLUS) 2TB, M.2 INTERNAL NVMe PCIe4 SSD, 7250R/6300W MB/s

Spectacular speed everyday

Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day

Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.

Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software

Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life

For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance

Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency

Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility

Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Technical Specifications

BrandSamsung
CategoryAccessories & Components
SKUMZ-V9S2T0BW
Part NumberMZ-V9S2T0BW
ConditionNew
Mean time between failures (MTBF)1500000 h
S.M.A.R.T. supportYes
TRIM supportYes
DevSlp (device sleep) supportYes
Random write (4KB)1350000 IOPS
Random read (4KB)1000000 IOPS
Write speed6300 MB/s
Read speed7250 MB/s
M.2 SSD size2280 (22 x 80 mm)
Hardware encryptionYes
Component forPC
Memory typeV-NAND TLC
NVMeYes
InterfacePCI Express 4.0
SSD form factorM.2
SSD capacity2 TB
Security algorithms256-bit AES
NVMe version2.0
Power consumption DevSlp (device sleep)5 mW
Power consumption (idle)0.06 W
Average power consumption (read)4.6 W
Average power consumption (write)4.2 W
Power consumption (write)4.2 W
Power consumption (read)4.6 W
Operating voltage3.3 V
Operating shock1500 G
Operating temperature (T-T)0 - 70 °C
Weight9 g
Height80.2 mm
Depth2.38 mm
Width80.2 mm