Brand: SK Hynix | Category: Memory (RAM)
SKU: SKHY-HBM3E12H36GB | Part #: HBM3E-12H-36GB | MPN: HBM3E-12H-36GB
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The SK Hynix HBM3E 12-Hi 36GB Memory Stack from SK Hynix is enterprise-grade Memory (RAM) hardware built for data centers. SK Hynix HBM3E 12-Hi delivers 36GB of stacked DRAM capacity at up to 1.28 TB/s bandwidth, purpose-built for next-generation AI accelerators and high-performance computing platforms. Available in brand new condition. SK Hynix memory (ram) products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.
| Brand | SK Hynix |
| Category | Memory (RAM) |
| SKU | SKHY-HBM3E12H36GB |
| Part Number | HBM3E-12H-36GB |
| Condition | New |
| Product Family | HBM3E 12-Hi |
| Capacity per Stack | 36 GB |
| Memory Standard | JEDEC HBM3E |
| Stack Configuration | 12-Hi (12 DRAM dies per stack) |
| Memory Bus Width | 1024-bit (per stack) |
| Peak Memory Bandwidth | 1.28 TB/s per stack |
| Data Rate | 9.6 Gbps per pin |
| Die Technology | 1b nm (1-beta) DRAM process node |
| Interconnect Technology | Through-Silicon Via (TSV) |
| Packaging Technology | MR-MUF (Mass Reflow Molded Underfill) |
| Integration Method | 2.5D silicon interposer (CoWoS / similar advanced packaging) |
| Interface Compliance | JEDEC HBM3E standard |
| Operating Voltage (VDD) | 1.05 V (nominal) |
| ECC Support | On-die ECC (ODECC) with advanced correction |
| Thermal Design | Optimized for sustained operation within AI accelerator thermal envelopes |
| Target Applications | AI accelerators, next-generation GPUs, HPC compute nodes |
| Production Status | Mass production (Q1 2025) |
| Per-Stack Power Efficiency | Improved TB/s per watt versus 8-Hi HBM3E baseline |
| Stacked Die Count vs. Previous Gen | 12 layers vs. 8 layers (50% increase in capacity per stack) |
| Form Factor | HBM3E standard footprint for interposer-based multi-chip module integration |