Brand: Samsung | Category: Memory (RAM)
SKU: SAMS-K4DAH8H05MMCQR | Part #: K4DAH8H05M-MCQR | MPN: K4DAH8H05M-MCQR
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The Samsung HBM3E 12-High 36GB Memory from Samsung is enterprise-grade Memory (RAM) hardware built for data centers. Samsung's 12-high HBM3E stack delivers 36GB capacity and over 1.2TB/s bandwidth for the most demanding AI accelerator workloads. Available in brand new condition. Samsung memory (ram) products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAMS-K4DAH8H05MMCQR |
| Part Number | K4DAH8H05M-MCQR |
| Condition | New |
| Product Name | HBM3E 12-High 36GB |
| Memory Standard | JEDEC HBM3E |
| Stack Configuration | 12-High (12 DRAM dies per stack) |
| Capacity per Stack | 36 GB |
| DRAM Process Node | Samsung 1c-nm |
| Bus Width | 1024-bit (per stack) |
| Number of Channels per Stack | 16 independent channels |
| Bits per Channel | 64-bit |
| Memory Bandwidth (per stack) | >1.2 TB/s |
| Data Rate | >2.4 Gbps per pin |
| Operating Voltage (VDD) | 1.05 V nominal |
| Die Interconnect Technology | Through-Silicon Via (TSV) with micro-bump bonding |
| Interface Type | HBM3E PHY (2.5D/3D package integration) |
| Compatible Packaging Platforms | CoWoS (Chip-on-Wafer-on-Substrate), Foveros, SoIC, EMIB |
| ECC | Advanced on-die ECC with SEC-DED across all channels |
| Operating Temperature Range | 0°C to 95°C junction (Tj) |
| Typical Power Consumption | Approximately 10–15 W per stack at peak bandwidth (workload dependent) |
| Form Factor | HBM3E bare-die stack for 2.5D/3D substrate integration |
| Target Applications | AI Training Accelerators, HPC Processors, AI Inference ASICs, Custom Silicon |
| Launch Date | Q2 2025 |
| Compliance | JEDEC JESD238 (HBM3E) specification compliant |