SK Hynix DDR5 512GB 6400 MT/s MCRDIMM
Brand: SK Hynix | Category: Memory (RAM)
SKU: HMCCAGB16MEBRA181N | Part #: HMCCAGB16MEBRA181N | MPN: HMCCAGB16MEBRA181N
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About the SK Hynix DDR5 512GB 6400 MT/s MCRDIMM
SK Hynix DDR5 512GB MCRDIMM (HMCCAGB16MEBRA181N) is a registered memory module with on-die ECC, purpose-built for Intel Xeon Scalable processors and next-generation server platforms requiring DDR5 MCRDIMM support. This 512GB capacity module operates at 6400 MT/s with CL46 latency, delivering the throughput and reliability demanded by hyperscale data centers and high-performance computing environments. The multiplexer combined ranks architecture maximizes memory density while maintaining strict error correction through dual-layer ECC protection—both on-die and module-level redundancy—ensuring mission-critical workload integrity across extended operational windows.
Built by SK Hynix with JEDEC-compliant SPD and Post-Package Repair (PPR) support, this module runs at 1.1V operating voltage and maintains stability across the full 0–85°C case temperature range. Enterprise storage architects and AI infrastructure teams rely on DDR5 MCRDIMM configurations like this to consolidate massive in-memory datasets, accelerate machine learning inference, and support real-time analytics at scale. The 288-pin registered design integrates a buffered architecture that reduces electrical load on the server's memory controller, enabling denser configurations without compromising stability. Contact Omnixon Global to request a quotation for the SK Hynix DDR5 512GB MCRDIMM module and explore volume pricing options for your next-generation infrastructure deployment.
Enterprise Deployment Scenarios
- High-density virtualization hosts requiring 10TB+ memory footprints per server for consolidated workloads
- In-memory databases (SAP HANA, Oracle) scaling to terabyte-level datasets with zero data loss guarantees
- AI training and inference clusters leveraging dual-ECC protection for long-running model optimization jobs
- Real-time analytics platforms processing streaming data with sub-millisecond latency requirements
- Hyperscale cloud infrastructure expansion with certified DDR5 MCRDIMM compatibility validation
Technical Specifications
| Brand | SK Hynix |
| Category | Memory (RAM) |
| SKU | HMCCAGB16MEBRA181N |
| Part Number | HMCCAGB16MEBRA181N |
| Condition | New |
| Capacity | 512GB |
| Form Factor | MCRDIMM |
| Speed | 6400 MT/s |
| Manufacturer Part Number | HMCCAGB16MEBRA181N |
| Memory Type | DDR5 |
| Form Factor | MCRDIMM (Multiplexer Combined Ranks DIMM) |
| Capacity | 512 GB |
| Data Transfer Rate | 6400 MT/s |
| Module Width | 288-pin |
| ECC Support | Yes (on-die ECC plus module-level ECC) |
| On-Die ECC | Yes |
| Registered / Buffered | Registered with on-board data buffer (MCRDIMM architecture) |
| CAS Latency | CL46 (at 6400 MT/s, JEDEC SPD-defined) |
| Operating Voltage | 1.1 V |
| DRAM Generation | DDR5 |
| Post-Package Repair (PPR) | Supported |
| SPD | JEDEC-compliant Serial Presence Detect |
| Target Platform | Intel Xeon Scalable (Sapphire Rapids-HBM and later) and compatible server platforms with DDR5 MCRDIMM support |
| Operating Temperature | 0°C to 85°C (case temperature, standard JEDEC server DIMM range) |
Frequently Asked Questions about SK Hynix DDR5 512GB 6400 MT/s MCRDIMM
What does the SK Hynix DDR5 512GB 6400 MT/s MCRDIMM do?
The SK Hynix DDR5 512GB 6400 MT/s MCRDIMM is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. SK Hynix validates this module against major server vendor compatibility matrices.
What are the headline specs of the SK Hynix DDR5 512GB 6400 MT/s MCRDIMM?
Key specifications for the SK Hynix DDR5 512GB 6400 MT/s MCRDIMM: new condition; memory type DDR5; memory capacity 512GB; memory speed 6400 MT/s; memory voltage 1.1V; memory form factor MCRDIMM. Manufacturer part number HMCCAGB16MEBRA181N. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.