Brand: Samsung | Category: Memory (RAM)
SKU: M321R6GA0P82-CCP | Part #: M321R6GA0P82-CCP | MPN: M321R6GA0P82-CCP
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The Samsung DRAM Server DDR5 M321R6GA0P82-CCP is a 48GB Registered DIMM (RDIMM) built on Samsung's industry-leading DDR5 DRAM technology. As the world's largest DRAM manufacturer, Samsung engineered this module specifically for demanding enterprise server environments where memory bandwidth, capacity density, and reliability are non-negotiable. The transition from DDR4 to DDR5 represents one of the most significant generational leaps in server memory architecture in over a decade — delivering up to 1.87x greater bandwidth, improved power efficiency via on-die ECC, and dramatically higher per-DIMM capacities. The M321R6GA0P82-CCP slots directly into Intel Xeon Scalable (4th Gen Sapphire Rapids and beyond) and AMD EPYC Genoa/Bergamo server platforms, making it the ideal upgrade component for organisations modernising their compute infrastructure across the GCC and globally.
At 48GB per module, this RDIMM occupies a strategic sweet spot in the DDR5 portfolio — offering significantly higher density than 32GB modules while remaining cost-effective compared to 64GB or 96GB variants. For enterprise architects designing memory-optimised servers, deploying multiple M321R6GA0P82-CCP modules enables terabyte-scale memory configurations within a single 2-socket server node, which is critical for in-memory analytics, large language model (LLM) inference, and real-time OLAP workloads.
The M321R6GA0P82-CCP is built on Samsung's 1z nm (or advanced EUV) class DDR5 DRAM die technology. Unlike DDR4, the DDR5 architecture fundamentally redesigns the internal memory subsystem: each DDR5 DIMM contains two independent 32-bit sub-channels (effectively two 32-bit channels per DIMM slot) rather than a single 64-bit channel. This dual sub-channel architecture allows the memory controller to issue independent commands to each sub-channel simultaneously, significantly improving memory-level parallelism and reducing latency under mixed read/write workloads.
The RDIMM register (RCD — Registering Clock Driver) buffers address and command signals between the host memory controller and the DRAM devices, reducing electrical load on the memory bus and enabling stable operation with higher DIMM counts per channel. The module uses a 288-pin DDR5 RDIMM form factor (not backward compatible with DDR4 slots) and operates across a standard CAS latency of CL40 at 4800MT/s (40-39-39 primary timings), which is characteristic of DDR5 JEDEC-standard modules. Burst length is BL16 (Burst Chop 8 supported), and the module supports Command/Address training, Write Leveling, and Read/Write DQ training for optimal signal integrity.
The Samsung M321R6GA0P82-CCP is certified and validated for use with the following server platforms and ecosystems:
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| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | M321R6GA0P82-CCP |
| Part Number | M321R6GA0P82-CCP |
| Condition | New |
| Product Line | Samsung Server DRAM DDR5 |
| Module Type | RDIMM (Registered DIMM) |
| RoHS Compliance | RoHS 2.0 Compliant |
| Memory Technology | DDR5 SDRAM |
| Capacity per Module | 48 GB |
| Speed Rating | DDR5-4800 (PC5-38400) |
| Transfer Rate | 4800 MT/s |
| Peak Bandwidth | ~38.4 GB/s (theoretical per module) |
| Data Bus Width | 64-bit + 8-bit ECC (72-bit total) |
| Sub-Channel Architecture | 2x 32-bit independent sub-channels per DIMM |
| Rank Configuration | 6Rx8 (6 Ranks, x8 DRAM organisation) |
| Primary Timings (CL-tRCD-tRP) | 40-39-39 @ 4800 MT/s |
| Burst Length | BL16 (BC8 supported) |
| ECC Support | Yes — On-Die ECC + System-Level ECC (x72 ECC) |
| Error Correction | Single-bit error correction, Multi-bit error detection (SECDED) |
| On-Die ECC | Yes (DRAM-internal, corrects errors per die before propagation) |
| Form Factor | 288-pin DDR5 RDIMM |
| Module Dimensions | 133.35mm x 31.25mm (Standard RDIMM) |
| PCB Layers | 10-layer PCB |
| Heat Spreader | No (bare module, server chassis airflow assumed) |
| Operating Voltage (VDD) | 1.1V |
| I/O Voltage (VDDQ) | 1.1V |
| PMIC | Integrated On-DIMM Power Management IC (DDR5 PMIC) |
| Typical Power Consumption | ~7–9W per module at full load (DDR5-4800) |
| Operating Temperature | 0°C to 85°C (Extended Temp: A-temp variant dependent on SKU suffix) |
| Storage Temperature | -40°C to +95°C |
| Operating Humidity | 5% to 95% RH (non-condensing) |
| MTBF | >20,000,000 hours (estimated, per Samsung DRAM reliability data) |
| Post Package Repair (PPR) | Supported (Hard PPR and Soft PPR) |
| SPD Version | SPD 5.0 (DDR5 EEPROM) |
| Temperature Monitoring | Yes — integrated thermal sensor with JEDEC TS spec |
| Interface Standard | JEDEC JESD79-5 DDR5 |
| Compatible CPU Platforms | Intel Xeon Scalable 4th Gen (Sapphire Rapids); AMD EPYC 9004 Series (Genoa, Genoa-X, Bergamo) |
| Compatible Server Platforms | HPE ProLiant DL380/DL360/DL560 Gen11; Dell PowerEdge R760/R860/R960; Lenovo ThinkSystem SR650/SR850 V3; Supermicro H13 Series; Inspur NF5280M7 |
| Operating System Support | RHEL, SLES, Ubuntu Server LTS, VMware vSphere 8.x, Windows Server 2022, OpenShift, Kubernetes |
| Standards Compliance | JEDEC JESD79-5 DDR5, RoHS 2.0, REACH |
| OEM Certification | Samsung OEM-qualified; validated by major server OEMs (HPE, Dell, Lenovo, Supermicro) |
The Samsung DDR5 48GB RDIMM Server Memory Module M321R6GA0P82-CCP 4800MHz ECC is enterprise server memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
Key specifications for the Samsung DDR5 48GB RDIMM Server Memory Module M321R6GA0P82-CCP 4800MHz ECC: new condition; part number M321R6GA0P82-CCP; condition Brand New; brand Samsung; product line Samsung Server DRAM DDR5; module type RDIMM (Registered DIMM); rohs compliance RoHS 2.0 Compliant. Manufacturer part number M321R6GA0P82-CCP. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.