Samsung DDR5 128GB RDIMM Server Memory M321R1GA0MR2-CCP 4800MHz ECC Registered

Brand: Samsung | Category: Memory (RAM)

SKU: M321R1GA0MR2-CCP | Part #: M321R1GA0MR2-CCP | MPN: M321R1GA0MR2-CCP

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Product Overview

The Samsung DRAM Server DDR5 M321R1GA0MR2-CCP is a 128GB Registered DIMM (RDIMM) module built on Samsung's advanced DDR5 DRAM technology, purpose-engineered for enterprise-class server deployments. As data centres transition from DDR4 to DDR5 architecture, this module represents a critical upgrade path for organisations demanding higher memory bandwidth, improved power efficiency, and expanded capacity per DIMM slot.

Operating at a base speed of 4800MT/s with a 1.1V supply voltage — compared to DDR4's 1.2V — this 128GB module enables IT architects to design memory subsystems that simultaneously achieve higher throughput and lower energy consumption. The registered (buffered) architecture, combined with on-die ECC and full ECC across the data bus, ensures the data integrity required for financial transaction processing, in-memory databases, high-performance computing (HPC), and large-scale AI model training.

Sourced brand new and sealed, the M321R1GA0MR2-CCP is an ideal procurement choice for enterprise IT managers, cloud service providers, hyperscalers, and system integrators across the GCC region who are building or expanding next-generation server infrastructure on platforms such as Intel Xeon Scalable (Sapphire Rapids) and AMD EPYC (Genoa) processors.

Key Features & Benefits

• 128GB High-Density Capacity per DIMM: Delivers 128GB of usable memory in a single module, allowing servers with 16 or 32 DIMM slots to reach 2TB or 4TB of total addressable memory — critical for in-memory analytics, large language model (LLM) inference, and virtualisation density.
• DDR5-4800 Speed Grade: Operates at 4800MT/s (megabits per second transfer rate), delivering up to 38.4 GB/s of peak theoretical bandwidth per module — approximately 1.5× the bandwidth of equivalent DDR4-3200 modules.
• Registered (Buffered) DIMM Architecture: The register buffer on the RDIMM decouples the memory controller from the DRAM chips, enabling higher DIMM counts per channel and greater stability in densely populated, multi-DIMM server configurations.
• On-Die ECC (ODECC) + Full Bus ECC: Combines Samsung's internal on-die error correction with full 64-bit data plus 8-bit ECC across the entire memory bus, providing two independent layers of error protection essential for continuous mission-critical uptime.
• 1.1V Ultra-Low Voltage Operation: Compared to DDR4's standard 1.2V, the 0.1V reduction translates to meaningful power savings at scale — a fully populated 32-DIMM server sees measurable reductions in memory subsystem power draw, lowering TCO in large deployments.
• Samsung Verified Server Compatibility: Validated against major OEM server platforms including Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, and Supermicro platforms supporting Intel Xeon Scalable 4th Gen (Sapphire Rapids) and AMD EPYC 9004 Series (Genoa), ensuring seamless BIOS-level recognition and certified operation.
• 288-Pin DIMM Form Factor: The industry-standard DDR5 288-pin connector ensures physical compatibility with all DDR5-capable server motherboards while remaining mechanically distinct from DDR4 slots (key notch repositioned), preventing accidental incorrect installation.
• RoHS Compliant & JEDEC Standard: Manufactured in compliance with JEDEC DDR5 SDRAM standards and RoHS environmental directives, meeting procurement requirements for government, enterprise, and regulated-industry buyers across the UAE and GCC.

Technical Architecture

The M321R1GA0MR2-CCP is built on Samsung's proprietary DDR5 DRAM die, fabricated using Samsung's advanced process node optimised for server-grade reliability and density. Unlike consumer DDR5 modules, server RDIMMs integrate a Register Clock Driver (RCD) component — the central registered buffer — that handles command and address signals from the memory controller and re-drives them to the DRAM chips, significantly reducing signal integrity challenges in multi-DIMM configurations.

The module organises its 128GB capacity across dual sub-channels, each 32 bits wide (plus 8-bit ECC), a key architectural change from DDR4's single 64-bit channel per DIMM. This dual sub-channel design allows the memory controller to independently access both sub-channels in parallel, improving effective bandwidth and reducing latency for mixed read/write workloads typical in database and virtualisation environments.

Samsung's on-die ECC operates transparently within each DRAM die, correcting single-bit errors before data is even transmitted to the memory bus. This is layered with the module-level ECC (SECDED — Single Error Correct, Double Error Detect) across the full data bus, creating a robust two-tier fault tolerance architecture. The combination is particularly significant for AI/ML workloads where long training runs on large datasets require sustained error-free operation over days or weeks.

Performance & Capacity

The Samsung M321R1GA0MR2-CCP operates at the JEDEC-standard DDR5-4800 speed (PC5-38400), delivering the following performance characteristics:

• Data Transfer Rate: 4800 MT/s (megatransfers per second)
• Peak Theoretical Bandwidth: 38.4 GB/s per module
• Bus Width: 64-bit data bus + 8-bit ECC (72-bit total)
• Sub-Channel Architecture: 2× 32-bit sub-channels per DIMM
• CAS Latency: CL40 (tCL = 40 cycles at 4800MT/s, approximately 16.67ns absolute latency)
• Primary Timings: 40-39-39-76 (CL-tRCD-tRP-tRAS)
• Capacity: 128GB per module (8Gb×16 die configuration, ×4 or ×8 organisation)
• Ranks: 2-Rank (2R×8 or equivalent high-density stacking)
• Operating Voltage: 1.1V (VDD/VDDQ)
• Module PCB: 10-layer server-grade PCB with gold-plated contacts

Compatibility & Integration

The M321R1GA0MR2-CCP is designed for server platforms with DDR5 memory controllers. Verified and recommended platforms include:

• Intel: Xeon Scalable 4th Generation (Sapphire Rapids) — supporting up to DDR5-4800 natively; Xeon Scalable 5th Generation (Emerald Rapids)
• AMD: EPYC 9004 Series (Genoa) and EPYC 9754/9654 and higher — supporting DDR5-4800
• Server OEMs: Dell PowerEdge R760, R760xa, R960; HPE ProLiant DL380 Gen11, DL560 Gen11; Lenovo ThinkSystem SR650 V3, SR860 V3; Supermicro X13 Series; Fujitsu PRIMERGY RX2540 M7
• Operating Systems: Red Hat Enterprise Linux 8/9, SUSE Linux Enterprise Server 15 SP4+, Ubuntu Server 22.04 LTS, VMware vSphere 8.0, Windows Server 2022, and all major hypervisors
• Form Factor: Standard RDIMM (Registered DIMM), 288-pin DDR5
• Certifications: JEDEC DDR5 SDRAM Standard, RoHS 2.0 Directive, CE Marking, Samsung Server Memory Qualification
• Incompatibility Note: DDR5 is NOT backward compatible with DDR4 slots. Verify motherboard DDR5 support before procurement.

Ideal Use Cases

• AI & Machine Learning Training: Large-scale deep learning model training (LLMs, computer vision, NLP) demands massive in-memory dataset staging. A 128GB-per-DIMM density enables GPU server nodes to maintain multi-terabyte memory pools for frameworks like PyTorch and TensorFlow, reducing data loading bottlenecks.
• In-Memory Databases & OLAP Analytics: Platforms such as SAP HANA, Oracle TimesTen, Redis Enterprise, and Apache Ignite benefit directly from the 38.4 GB/s bandwidth and 128GB capacity, accelerating real-time query processing on petabyte-scale datasets without disk I/O penalties.
• High-Density Server Virtualisation: VMware vSphere, Microsoft Hyper-V, and KVM environments running hundreds of VMs per host require both high capacity and high bandwidth memory. The M321R1GA0MR2-CCP maximises VM density per server chassis, directly reducing hardware footprint and licensing costs.
• Cloud Service Provider Infrastructure: Public and private cloud operators deploying OpenStack, Kubernetes, or proprietary IaaS platforms benefit from the combination of high per-DIMM capacity, dual sub-channel bandwidth, and robust ECC — ensuring SLA compliance for multi-tenant workloads.
• High-Performance Computing (HPC) & Simulation: Computational fluid dynamics (CFD), finite element analysis (FEA), seismic processing, and genomics workloads in research and energy sectors require the maximum available memory bandwidth and capacity that DDR5 RDIMMs provide.
• Financial Services & Real-Time Risk Analytics: Trading platforms, risk engines, and fraud detection systems running Monte Carlo simulations or real-time stream processing require both the speed and the ECC reliability that the M321R1GA0MR2-CCP provides — where a single undetected bit error can have significant financial consequences.
• VDI (Virtual Desktop Infrastructure): Large-scale VDI deployments on Citrix Virtual Apps and Desktops or VMware Horizon benefit from the high memory density to support thousands of concurrent sessions per physical server, reducing per-seat infrastructure costs.

Related Products & Ecosystem

To build a complete, high-performance DDR5 server memory subsystem, consider these complementary products available from Omnixon:

• Samsung DDR5 64GB RDIMM Lower-capacity DDR5 RDIMM option for platforms with balanced capacity/cost requirements
• Samsung DDR5 32GB RDIMM Entry-level DDR5 server memory for edge servers and departmental workloads
• Intel Xeon Scalable 4th Gen (Sapphire Rapids) Processors Native DDR5 memory controller CPUs for new server builds
• AMD EPYC 9004 Series (Genoa) Processors High core-count DDR5-native CPUs for HPC and cloud density
• Dell PowerEdge R760 / R960 Servers DDR5-ready 2U and 4U rack servers supporting up to 32 DIMM slots
• HPE ProLiant DL380 Gen11 Industry-standard 2U server with full DDR5 RDIMM support
• Supermicro X13 Series Motherboards & Servers Flexible DDR5 platforms for custom HPC and storage builds
• Enterprise NVMe SSDs (Samsung PM9A3, Kioxia CM7) Pair high-bandwidth storage with DDR5 memory for maximum I/O pipeline performance