Samsung DDR5 128GB RDIMM 5600MHz

Brand: Samsung | Category: Memory (RAM)

SKU: M321R8GA0BB6-CWMQ | Part #: M321R8GA0BB6-CWMQ | MPN: M321R8GA0BB6-CWMQ

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Operating at CL46 latency with 1.1V voltage, the Samsung DDR5 128GB RDIMM 5600MHz module delivers the precision timing and low power consumption critical for high-frequency trading platforms and in-memory databases. This is a registered DIMM (RDIMM) built on Samsung's DDR5 architecture, offering 128GB capacity at 5600 MT/s with quad-rank (4Rx4) organization and x4 DRAM die configuration. The 288-pin design incorporates a DDR5 RCD Gen2 register clock driver and dual error-correction layers—both on-die ECC (ODECC) and system-level ECC—ensuring data integrity in mission-critical deployments. Part number M321R8GA0BB6-CWMQ, this module stands 31.25mm in height and operates reliably across 0°C to 85°C, meeting RoHS compliance standards for enterprise environments.

Samsung's commitment to reliability makes this DDR5 RDIMM particularly attractive to storage architects, database administrators, and IT procurement teams responsible for large-scale server farms and virtualization infrastructure. The quad-rank configuration and registered design minimize signal degradation across densely populated memory channels, while the combination of on-die and system ECC provides defense-in-depth against soft errors—essential for continuous uptime commitments. Organizations deploying multi-socket systems, hyperconverged infrastructure, or workloads demanding sub-50ns memory latency will find the CL46 timing and 5600 MHz speed optimized for throughput without thermal stress.

Omnixon Global supplies the Samsung DDR5 128GB RDIMM 5600MHz (M321R8GA0BB6-CWMQ) for immediate fulfillment across UAE and GCC markets. To request a formal quotation, specifications sheet, or technical validation for your infrastructure roadmap, please submit your RFQ through Omnixon Global's procurement portal or contact our enterprise memory team directly.