Micron HBM3E 24GB Stack
Brand: Micron | Category: Memory (RAM)
SKU: MT60B2G8HB-21E | Part #: MT60B2G8HB-21E | MPN: MT60B2G8HB-21E
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About the Micron HBM3E 24GB Stack
A single Micron HBM3E 24GB Stack establishes the memory ceiling for next-generation AI accelerators and high-performance computing nodes, with peak bandwidth reaching 1.2 TB/s per stack. This component (part number MT60B2G8HB-21E) represents the cutting edge of stacked DRAM architecture, delivering the throughput and density that GPU and AI infrastructure teams demand for real-time inference, training, and data-parallel workloads at datacenter scale.
The Micron HBM3E 24GB Stack is engineered as a bare-die component for 2.5D interposer integration using advanced packaging technologies such as CoWoS. Its 12-Hi stack configuration combines twelve 16 Gb DRAM dies with a base logic die, connected via Through-Silicon Via (TSV) technology with microbumps for signal integrity. Operating at 6.4 Gbps per pin across a 1024-bit interface, the stack delivers sixteen 64-bit channels and includes on-die ECC protection, all while maintaining a datacenter-grade operating range of 0°C to 95°C junction temperature at 1.1 V supply voltage. This architecture conforms to the HBM3E JEDEC standard (JESD238), ensuring compatibility with next-generation accelerator designs.
Deployment Scenarios
- AI model inference and training clusters requiring sustained multi-terabyte-per-second memory throughput
- High-frequency financial modeling and risk simulation platforms with strict latency and bandwidth constraints
- Large-language model (LLM) inference engines demanding high-capacity, low-power memory stacks
- Scientific computing and molecular dynamics simulations leveraging GPU-accelerated workloads
- Real-time video analytics and computer vision pipelines on edge and cloud accelerator platforms
Omnixon Global supplies the Micron HBM3E 24GB Stack (MT60B2G8HB-21E) to AI infrastructure teams, procurement specialists, and systems integrators across the Middle East and beyond. Contact our technical sales team to request a quotation for your next-generation accelerator deployment.
Technical Specifications
| Brand | Micron |
| Category | Memory (RAM) |
| SKU | MT60B2G8HB-21E |
| Part Number | MT60B2G8HB-21E |
| Condition | New |
| Manufacturer Part Number | MT60B2G8HB-21E |
| Product Family | HBM3E |
| JEDEC Standard | HBM3E (JESD238) |
| Capacity per Stack | 24 GB |
| Stack Configuration | 12-Hi (12 DRAM dies + 1 base logic die) |
| Die Density | 16 Gb per DRAM die |
| Interface Width | 1024-bit (per stack) |
| Data Rate | 6.4 Gbps per pin |
| Peak Bandwidth per Stack | 1.2 TB/s |
| Number of Channels per Stack | 16 |
| Bits per Channel | 64-bit |
| Supply Voltage (VDD) | 1.1 V |
| Interconnect Technology | Through-Silicon Via (TSV) with microbump |
| ECC Support | On-die ECC |
| Package Type | Bare-die stack for interposer integration |
| Target Integration | 2.5D interposer (CoWoS or equivalent advanced packaging) |
| Operating Temperature | 0°C to 95°C junction (datacenter grade) |
| Form Factor | Component (not a DIMM or user-installable module) |
Frequently Asked Questions about Micron HBM3E 24GB Stack
Is the Micron HBM3E 24GB Stack compatible with my server?
Part number MT60B2G8HB-21E is qualified for Micron servers that list compatible memory in their QVL. We verify QVL match before quoting — share your server model in the RFQ and our pre-sales engineers confirm fit, recommended population pattern, and total capacity supported.
What support applies to this memory module?
Full manufacturer support (typically 3 years, RDIMM/LRDIMM SKUs often lifetime against manufacturing defects). All product is sourced through distribution so support registers cleanly under your company name.
How do I request a quote?
Submit the RFQ form on this page with your quantity and destination country. Our pre-sales team responds with a vendor-confirmed quote, availability, and matching server-QVL confirmation if needed.