Brand: Samsung | Category: Memory (RAM)
SKU: SAMS-M321R0GA0PB0CQK | Part #: M321R0GA0PB0-CQK | MPN: M321R0GA0PB0-CQK
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The Samsung DDR5 128GB 4Rx4 LRDIMM represents a breakthrough in server memory density, engineered for next-generation data center architectures requiring unprecedented memory footprints. Built on DDR5 technology with load-reduced DIMM (LRDIMM) architecture, this module consolidates 128GB per slot, enabling single-socket systems to achieve multi-terabyte memory configurations without requiring multi-socket server complexity. The 4Rx4 design (4 ranks, 4 banks per rank) optimizes signal integrity and thermal efficiency across high-density populated memory channels, critical for systems operating at sustained full capacity.
Launched in 2023-Q2, this module targets demanding workloads including in-memory database platforms (SAP HANA, Oracle Database with Exadata), real-time analytics engines, and large-language model inference hosting. The 4800MHz speed grade balances bandwidth delivery with power efficiency, providing 38.4GB/s per-channel throughput while maintaining compatibility with leading Xeon and EPYC processor architectures. Load reduction circuitry minimizes electrical strain on memory controllers, enabling reliable operation in densely-populated memory subsystems spanning 8+ DIMM configurations.
The module's 128GB capacity directly addresses the memory bottleneck for organizations deploying distributed training frameworks, vector databases, and graph analytics platforms where per-server memory locality reduces network fabric utilization. Thermal-optimized design with standard heatspreader reduces hotspot formation in high-density server chassis, supporting continuous operation in virtualized environments where memory overcommit is performance-critical.
| Manufacturer | Samsung |
| Product Line | Server Memory |
| Form Factor | LRDIMM (Load-Reduced Dual In-Line Memory Module) |
| Capacity | 128GB |
| Memory Technology | DDR5 SDRAM |
| Speed Grade | 4800MHz |
| Data Rate | 4800 Mbps |
| Voltage | 1.1V (nominal) |
| CAS Latency | 40 |
| Rank Configuration | 4Rx4 (4 Ranks, 4 Banks per Rank) |
| Module Density | 128Gb (16Gb x 8) |
| ECC | Yes, Full 72-bit ECC |
| Registered | Yes, LRDIMM with load-reduction circuitry |
| Bandwidth Per Channel | 38.4GB/s |
| Thermal Design Power | 15W (nominal) |
| Operating Temperature | 0°C to 85°C |
| Storage Temperature | -40°C to 100°C |
| Module Dimensions | 133mm (L) x 32mm (H) |
| JEDEC Compliance | JEDEC DDR5 SPD (Serial Presence Detect) |
| Processor Compatibility | 3rd Gen Intel Xeon Scalable (Ice Lake), 4th Gen Intel Xeon Scalable (Sapphire Rapids), AMD EPYC 9004 Series |
| Maximum Memory Per Channel | 384GB (8 x 48GB or 3 x 128GB configurations dependent on platform support) |
Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAMS-M321R0GA0PB0CQK |
| Part Number | M321R0GA0PB0-CQK |
| Condition | New |
| Product Line | Server Memory |
| Form Factor | LRDIMM (Load-Reduced Dual In-Line Memory Module) |
| Capacity | 128GB |
| Memory Technology | DDR5 SDRAM |
| Speed Grade | 4800MHz |
| Data Rate | 4800 Mbps |
| Voltage | 1.1V (nominal) |
| CAS Latency | 40 |
| Rank Configuration | 4Rx4 (4 Ranks, 4 Banks per Rank) |
| Module Density | 128Gb (16Gb x 8) |
| ECC | Yes, Full 72-bit ECC |
| Registered | Yes, LRDIMM with load-reduction circuitry |
| Bandwidth Per Channel | 38.4GB/s |
| Thermal Design Power | 15W (nominal) |
| Operating Temperature | 0°C to 85°C |
| Storage Temperature | -40°C to 100°C |
| Module Dimensions | 133mm (L) x 32mm (H) |
| JEDEC Compliance | JEDEC DDR5 SPD (Serial Presence Detect) |
| Processor Compatibility | 3rd Gen Intel Xeon Scalable (Ice Lake), 4th Gen Intel Xeon Scalable (Sapphire Rapids), AMD EPYC 9004 Series |
| Maximum Memory Per Channel | 384GB (8 x 48GB or 3 x 128GB configurations dependent on platform support) |