Brand: Samsung | Category: Memory (RAM)
SKU: SAMS-NA | Part #: N/A | MPN: N/A
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Samsung Memory operates as a division of Samsung Electronics, manufacturing advanced DRAM (Dynamic Random Access Memory) and NAND flash memory products that serve the global semiconductor ecosystem. The product portfolio spans server-grade RDIMM and LRDIMM modules for data center deployments, client-focused SODIMM and UDIMM configurations for workstations and desktops, and specialized memory solutions optimized for AI/ML acceleration, high-frequency trading platforms, and real-time analytics infrastructure. Samsung's memory manufacturing leverages proprietary process nodes and architectural innovations to deliver industry-leading density, throughput, and power efficiency across multiple technology generations.
| Manufacturer | Samsung Electronics (Memory Division) |
| Product Category | DRAM (Dynamic Random Access Memory) |
| Primary Form Factors | RDIMM (Registered DIMM), LRDIMM (Load-Reduced DIMM), SODIMM (Small Outline DIMM), UDIMM (Unbuffered DIMM) |
| Capacity Range | 4 GB to 512 GB per module (depending on form factor and technology generation) |
| Memory Technology | DDR5, DDR4, DDR3 (legacy) |
| ECC Support | Yes (ECC variants available for enterprise and server applications) |
| Speed Grades | Up to 7200+ MT/s (DDR5); up to 3200 MT/s (DDR4) |
| Voltage Specifications | 1.1V typical (DDR5); 1.2V typical (DDR4) |
| Thermal Management | Passive cooling; optional active heatsinks for high-frequency/high-load scenarios |
| JEDEC Compliance | Full JEDEC DDR5/DDR4/DDR3 standard compliance |
| Registered vs Unbuffered | Both RDIMMs (with register and clock buffer) and UDIMMs (unbuffered, direct connection) available |
| CAS Latency | CL40-CL48 (DDR5); CL16-CL22 (DDR4) depending on speed grade |
| Manufacturing Node | Advanced semiconductor process (sub-20nm for modern generations) |
| Quality Assurance | Extensive burn-in testing, JEDEC qualification, validation programs |
| Supply Continuity | Vertically integrated Samsung fabs ensure supply stability and consistency |
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| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAMS-NA |
| Part Number | N/A |
| Condition | New |
| Product Category | DRAM (Dynamic Random Access Memory) |
| Primary Form Factors | RDIMM (Registered DIMM), LRDIMM (Load-Reduced DIMM), SODIMM (Small Outline DIMM), UDIMM (Unbuffered DIMM) |
| Capacity Range | 4 GB to 512 GB per module (depending on form factor and technology generation) |
| Memory Technology | DDR5, DDR4, DDR3 (legacy) |
| ECC Support | Yes (ECC variants available for enterprise and server applications) |
| Speed Grades | Up to 7200+ MT/s (DDR5); up to 3200 MT/s (DDR4) |
| Voltage Specifications | 1.1V typical (DDR5); 1.2V typical (DDR4) |
| Thermal Management | Passive cooling; optional active heatsinks for high-frequency/high-load scenarios |
| JEDEC Compliance | Full JEDEC DDR5/DDR4/DDR3 standard compliance |
| Registered vs Unbuffered | Both RDIMMs (with register and clock buffer) and UDIMMs (unbuffered, direct connection) available |
| CAS Latency | CL40-CL48 (DDR5); CL16-CL22 (DDR4) depending on speed grade |
| Manufacturing Node | Advanced semiconductor process (sub-20nm for modern generations) |
| Quality Assurance | Extensive burn-in testing, JEDEC qualification, OEM validation programs |
| Supply Continuity | Vertically integrated Samsung fabs ensure supply stability and consistency |