Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM
Brand: Samsung | Category: Memory (RAM)
SKU: SAM-M321R4GA0PB0-CWM | Part #: M321R4GA0PB0-CWM | MPN: M321R4GA0PB0-CWM
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About the Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM
About Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM
Upgrade your enterprise server with the Samsung 32GB DDR5-5600 RDIMM memory module. This high-performance RAM is engineered to meet the rigorous demands of modern data centers, providing a significant boost in speed and efficiency for a wide range of server applications. With a clock speed of 5600MHz, this DDR5 module offers a substantial improvement in bandwidth and responsiveness over previous DDR4 technology, enabling faster data processing and smoother multitasking for mission-critical workloads.
Built with Samsung's renowned quality and reliability, this 32GB module features Error-Correcting Code (ECC) to detect and correct internal data corruption, ensuring maximum data integrity and system uptime. The registered design (RDIMM) further enhances stability by buffering the command and control signals between the memory controller and the DRAM modules, making it an ideal choice for servers with large memory configurations. Operating at a low voltage of 1.1V, this memory module also contributes to lower power consumption and reduced thermal output, helping to optimize the total cost of ownership (TCO) in your data center.
Whether you are running virtualization, cloud computing, or large-scale database applications, the Samsung M321R4GA0PB0-CWM is designed to deliver consistent and dependable performance. Its 1Rx4 organization and 288-pin form factor ensure broad compatibility with the latest generation of server platforms. Trust in Samsung's industry-leading memory solutions to power your most demanding enterprise workloads and unlock the full potential of your server infrastructure.
Technical Specifications
| Specification | Value |
|---|---|
| Capacity | 32GB |
| Speed | 5600MHz |
| Type | DDR5 RDIMM |
| Voltage | 1.1V |
| Rank | 1Rx4 |
| CAS Latency | CL46 |
| Form Factor | 288-pin DIMM |
| ECC | Yes |
Key Features
- Capacity: 32GB
- Speed: 5600MHz
- Type: DDR5 RDIMM
- Voltage: 1.1V
- Rank: 1Rx4
- CAS Latency: CL46
Ideal Use Cases
- Enterprise IT infrastructure
- Data center modernization
- Cloud and hybrid deployments
- Business continuity solutions
- Performance optimization
- Scalable computing solutions
Technical Specifications
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAM-M321R4GA0PB0-CWM |
| Part Number | M321R4GA0PB0-CWM |
| Condition | New |
| Capacity | 32GB |
| Form Factor | 288-pin DIMM |
| Speed | 5600 MT/s |
| Capacity | 32GB |
| Memory Speed | 5600 MT/s |
| Type | DDR5 RDIMM |
| Memory Voltage | 1.1V |
| Rank | 1Rx4 |
| CAS Latency | CL46 |
| Memory Form Factor | DIMM |
| ECC | Yes |
Frequently Asked Questions about Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM
What does the Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM do?
The Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM is enterprise 288-pin DIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
What are the headline specs of the Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM?
Key specifications for the Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM: capacity 32GB; form factor 288-pin DIMM; new condition; capacity 32GB; speed 5600MHz; type DDR5 RDIMM; voltage 1.1V; rank 1Rx4; cas latency CL46. Manufacturer part number M321R4GA0PB0-CWM. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.
Is the Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM compatible with my infrastructure?
The Samsung 32GB DDR5-5600 RDIMM M321R4GA0PB0-CWM fits 288-pin DIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.