Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP

Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M321R4GA0PB2-CCP | Part #: M321R4GA0PB2-CCP | MPN: M321R4GA0PB2-CCP

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About the Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP

With a CAS latency of CL46 and operating voltage of 1.1V, the Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP delivers the low-latency, power-efficient memory architecture that high-frequency trading platforms and in-memory database systems demand. This module operates at 6400 MT/s (PC5-51200), providing the bandwidth modern server workloads require without excessive thermal overhead or power consumption penalties.

The Samsung M321R4GA0PB2-CCP is a registered dual-rank RDIMM with 32GB capacity, organized as x4 DRAM across 288 pins, making it the standard choice for enterprise data center deployments, virtualization hosts, and mission-critical analytics clusters. On-die ECC combined with module-level ECC protection ensures data integrity across thousands of hours of continuous operation, while the RCD (Register Clock Driver) buffering isolates signal load from the memory controller—essential for high-density server configurations. IT procurement teams and storage architects selecting memory for next-generation Xeon and EPYC platforms will find this DDR5 module's 0°C to 85°C operating temperature range and RoHS compliance align with modern sustainability and thermal management requirements. The dual-rank architecture maximizes capacity per slot without sacrificing performance, a critical advantage in space-constrained data centers where per-watt efficiency and uptime are non-negotiable.

Whether you are building hyperscale infrastructure, upgrading legacy virtualization hosts, or qualifying memory for latency-sensitive applications, the Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP meets enterprise-grade standards for reliability and performance. Contact Omnixon Global to submit a Request for Quotation on this Samsung module and explore volume pricing, lead times, and logistics options tailored to your deployment timeline.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAM-M321R4GA0PB2-CCP
Part NumberM321R4GA0PB2-CCP
ConditionNew
Capacity32GB
Form Factor288-pin DIMM
Speed6400 MT/s
Manufacturer Part NumberM321R4GA0PB2-CCP
Module TypeRDIMM (Registered / Buffered)
Capacity32GB
DDR GenerationDDR5
Speed GradeDDR5-6400 (PC5-51200)
Data Transfer Rate6400 MT/s
CAS LatencyCL46
Voltage1.1V
Pin Count288-pin
Data Bus Width64-bit
ECC SupportYes (on-die ECC + module-level ECC)
Ranks2 (Dual Rank)
DRAM Organizationx4
Form Factor288-pin UDIMM/RDIMM (RDIMM full-height)
On-Die ECCYes
Register TypeRCD (Register Clock Driver) — buffered
Operating Temperature0°C to 85°C
RoHS CompliantYes

Frequently Asked Questions about Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP

What does the Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP do?

The Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP is enterprise 288-pin DIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP?

Key specifications for the Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP: capacity 32GB; form factor 288-pin DIMM; new condition; capacity 32GB; speed 6400MHz; type DDR5 RDIMM; voltage 1.1V; rank 1Rx4; form factor 288-pin DIMM. Manufacturer part number M321R4GA0PB2-CCP. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP compatible with my infrastructure?

The Samsung 32GB DDR5-6400 RDIMM M321R4GA0PB2-CCP fits 288-pin DIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.