Samsung 256GB DDR5-5600 RDIMM PC5-44800 4Rx4 ECC Registered

The Samsung 256GB DDR5-5600 RDIMM (M321RYGA0BB0-CQKVS) is a 3DS (Three-Dimensional Stacked) Registered ECC DIMM engineered for maximum-capacity server deployments where per-socket memory density is paramount. Built on Samsung's advanced 3DS packaging technology, the module stacks multiple DRAM dies vertically to achieve 256GB on a single DIMM while maintaining the physical and electrical compatibility of a standard RDIMM form factor. Operating at DDR5-5600 (PC5-44800) with a 4Rx4 rank and width configuration, it leverages the DDR5 generation's on-die ECC, improved signal integrity features, and dual 32-bit subchannels to deliver high bandwidth alongside robust data reliability for mission-critical environments.

This module targets platforms built on Intel Xeon Scalable (Sapphire Rapids and successor) processors that expose DDR5 DIMM slots, where populating slots with 256GB 3DS RDIMMs enables multi-terabyte memory configurations per server node. The 4Rx4 organization (four ranks, x4 DRAM width) provides the density headroom required for such capacities, and the registered (buffered) clock and address signals ensure electrical stability across fully populated memory channels. Operating voltage is the DDR5-standard 1.1V, contributing to a favorable performance-per-watt profile relative to the raw capacity delivered.

In enterprise AI infrastructure and large-scale in-memory analytics environments, the ability to hold entire working datasets—model weights, graph structures, or multi-terabyte OLAP datasets—in DRAM without tiering to slower storage tiers directly accelerates time-to-insight and training throughput. The M321RYGA0BB0-CQKVS is specifically suited to nodes running frameworks such as SAP HANA, Apache Spark in-memory mode, large language model inference engines, and high-frequency financial risk engines where latency-sensitive random access across hundreds of gigabytes determines system performance ceilings.

Ideal for

• Populating multi-terabyte in-memory databases (e.g., SAP HANA) on dual-socket servers to eliminate storage-tier data access latency during complex analytical queries
• Large language model (LLM) inference nodes where full model weight sets for 70B+ parameter models must reside entirely in DRAM to meet sub-second response SLAs
• High-performance computing (HPC) nodes running memory-bound simulations—such as computational fluid dynamics or molecular dynamics—that benefit from maximum addressable DRAM per node
• In-memory Apache Spark or Flink analytics clusters processing multi-terabyte streaming datasets without spill-to-disk, sustaining high query concurrency in real-time data pipelines
• Financial services risk calculation engines performing Monte Carlo simulations or real-time portfolio valuation across large position datasets held entirely in volatile memory
• Virtualization and cloud-dense hosts (VMware vSphere, Red Hat OpenShift) requiring maximum VM or container memory overcommit headroom per physical host to reduce node count and rack footprint

Technical specifications

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.