Brand: Samsung | Category: Memory (RAM)
SKU: SAMS-M321R8GA0PB0CCP | Part #: M321R8GA0PB0-CCP | MPN: M321R8GA0PB0-CCP
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The Samsung 64GB DDR5-6400 RDIMM (M321R8GA0PB0-CCP) represents Samsung's latest-generation registered ECC server memory, operating at 6400 MT/s to deliver exceptional bandwidth for compute-intensive enterprise platforms. Built on Samsung's advanced 1b-nm DRAM process node, this module uses a 2Rx4 (dual-rank, x4 organization) architecture across a 288-pin RDIMM form factor, providing the density and signal integrity required for demanding dual-socket server deployments. The PC5-51200 designation reflects a peak theoretical bandwidth of 51,200 MB/s per module, a substantial step forward from prior DDR5 speeds.
As a Registered DIMM, the M321R8GA0PB0-CCP incorporates an on-module register (RCD) that re-drives command and address signals, significantly reducing electrical load on the memory controller and enabling stable multi-DIMM-per-channel configurations in large-memory server builds. ECC (Error-Correcting Code) functionality provides continuous single-bit error correction and multi-bit error detection, a fundamental requirement for data integrity in enterprise, financial, and scientific computing environments. The module operates at 1.1V, consistent with DDR5 platform power specifications.
This module is designed for compatibility with server platforms based on Intel Xeon Scalable (Sapphire Rapids and successors) and AMD EPYC (Genoa/Bergamo and successors) processors that support DDR5-6400 RDIMM. It is particularly well-suited for workloads that benefit from maximized memory bandwidth and large addressable memory capacity per socket, including in-memory databases, high-performance computing clusters, AI/ML inference serving, and virtualization-dense environments where memory throughput is a primary bottleneck.
| Manufacturer | Samsung |
| Manufacturer Part Number | M321R8GA0PB0-CCP |
| Memory Type | DDR5 SDRAM |
| Form Factor | RDIMM (Registered DIMM) |
| Capacity | 64GB |
| Speed | 6400 MT/s |
| PC Speed Rating | PC5-51200 |
| Module Organization | 2Rx4 (Dual Rank, x4) |
| Error Correction | ECC (Error-Correcting Code) |
| Pin Count | 288-pin |
| Voltage | 1.1V |
| CAS Latency (CL) | 52 |
| Die Process Node | 1b-nm |
| DRAM Manufacturer | Samsung |
| On-Die ECC | Yes |
| Register Type | RCD (Registering Clock Driver) |
| Data Width | 64-bit (with ECC: 72-bit) |
| Operating Temperature | 0°C to 85°C (standard commercial range) |
| Height | 1.23 in (31.25 mm) low-profile |
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| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAMS-M321R8GA0PB0CCP |
| Part Number | M321R8GA0PB0-CCP |
| Condition | New |
| Manufacturer Part Number | M321R8GA0PB0-CCP |
| Memory Type | DDR5 SDRAM |
| Form Factor | RDIMM (Registered DIMM) |
| Capacity | 64GB |
| Speed | 6400 MT/s |
| PC Speed Rating | PC5-51200 |
| Module Organization | 2Rx4 (Dual Rank, x4) |
| Error Correction | ECC (Error-Correcting Code) |
| Pin Count | 288-pin |
| Voltage | 1.1V |
| CAS Latency (CL) | 52 |
| Die Process Node | 1b-nm |
| DRAM Manufacturer | Samsung |
| On-Die ECC | Yes |
| Register Type | RCD (Registering Clock Driver) |
| Data Width | 64-bit (with ECC: 72-bit) |
| Operating Temperature | 0°C to 85°C (standard commercial range) |
| Height | 1.23 in (31.25 mm) low-profile |