Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module

Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module

Brand: Samsung | Category: Hard Drive (NVMe/SSD/HDD)

SKU: M474A2G43BB2-CWE | Part #: M474A2G43BB2-CWE | MPN: M474A2G43BB2-CWE

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About the Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module

Built on Samsung's proven DDR4 ECC architecture, the 16GB DDR4 3200MHz ECC SODIMM (M474A2G43BB2-CWE) delivers error-correcting capability essential for mission-critical applications where data integrity cannot be compromised. This unbuffered ECC module operates at 1.2V with a CAS latency of CL22, providing a balance of performance and reliability across enterprise server and workstation environments. For IT procurement teams and infrastructure architects evaluating memory solutions for virtualized or database-intensive deployments, this Samsung module combines capacity with built-in fault tolerance.

The M474A2G43BB2-CWE features a 260-pin SODIMM form factor, dual-rank architecture, and 72-bit data width (64-bit data plus 8-bit ECC overhead) to safeguard against single-bit errors in real time. Operating across the industrial temperature range of 0°C to 85°C and manufactured to RoHS compliance standards, this Samsung memory module integrates into compact server platforms and dense edge-computing environments where space is constrained. At 16GB capacity and 3200MHz (PC4-25600) speed, it addresses the memory bandwidth demands of modern multi-threaded workloads while maintaining strict data accuracy.

Enterprise Deployment Scenarios

  • Virtualization hosts and hyperconverged infrastructure requiring ECC protection for mission-critical guest VMs
  • Small-form-factor servers and appliances constrained by SODIMM socket availability
  • Database and analytics platforms where silent data corruption poses operational and compliance risks
  • Edge compute nodes and remote office servers demanding reliability in challenging thermal environments
  • Legacy and next-generation server refresh cycles prioritizing memory redundancy without buffer overhead

Contact Omnixon Global for detailed specifications, volume pricing, and an RFQ on the Samsung 16GB DDR4 3200MHz ECC SODIMM (M474A2G43BB2-CWE) and complementary memory solutions.

Technical Specifications

BrandSamsung
CategoryHard Drive (NVMe/SSD/HDD)
SKUM474A2G43BB2-CWE
Part NumberM474A2G43BB2-CWE
ConditionNew
Capacity16GB
Form Factor260-pin SODIMM
Speed3200MHz
Manufacturer Part NumberM474A2G43BB2-CWE
Memory TypeDDR4 ECC SODIMM
Capacity16GB
Speed3200MHz (PC4-25600)
Interface260-pin SODIMM
ECCYes — Error-Correcting Code (unbuffered ECC)
Registered / BufferedUnbuffered (UDIMM/ECC SODIMM)
Operating Voltage1.2V
CAS LatencyCL22
Module Organization2Gx72
RanksDual Rank
Data Width72-bit (64-bit data + 8-bit ECC)
Die ManufacturerSamsung
Form FactorSODIMM
GenerationDDR4
Operating Temperature0°C to 85°C
RoHS CompliantYes

Frequently Asked Questions about Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module

What does the Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module (M474A2G43BB2-CWE) do?

the Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module (M474A2G43BB2-CWE) suits enterprise data-center storage tiers — all-flash arrays, hyperconverged storage pools (vSAN, Ceph), database backends, and high-throughput backup repositories. It is supported by major server platforms.

What are the headline specs of the Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module (M474A2G43BB2-CWE)?

Key specifications for the Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module (M474A2G43BB2-CWE): new condition; brand Samsung; module type DDR4 ECC SODIMM; capacity 16GB; speed 3200MHz; voltage 1.2V; form factor 260-pin SODIMM. Manufacturer part number M474A2G43BB2-CWE. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.