Brand: Samsung | Category: Hard Drive (NVMe/SSD/HDD)
SKU: M474A2G43BB2-CWE | Part #: M474A2G43BB2-CWE | MPN: M474A2G43BB2-CWE
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Built on Samsung's proven DDR4 ECC architecture, the 16GB DDR4 3200MHz ECC SODIMM (M474A2G43BB2-CWE) delivers error-correcting capability essential for mission-critical applications where data integrity cannot be compromised. This unbuffered ECC module operates at 1.2V with a CAS latency of CL22, providing a balance of performance and reliability across enterprise server and workstation environments. For IT procurement teams and infrastructure architects evaluating memory solutions for virtualized or database-intensive deployments, this Samsung module combines capacity with built-in fault tolerance.
The M474A2G43BB2-CWE features a 260-pin SODIMM form factor, dual-rank architecture, and 72-bit data width (64-bit data plus 8-bit ECC overhead) to safeguard against single-bit errors in real time. Operating across the industrial temperature range of 0°C to 85°C and manufactured to RoHS compliance standards, this Samsung memory module integrates into compact server platforms and dense edge-computing environments where space is constrained. At 16GB capacity and 3200MHz (PC4-25600) speed, it addresses the memory bandwidth demands of modern multi-threaded workloads while maintaining strict data accuracy.
Contact Omnixon Global for detailed specifications, volume pricing, and an RFQ on the Samsung 16GB DDR4 3200MHz ECC SODIMM (M474A2G43BB2-CWE) and complementary memory solutions.
| Brand | Samsung |
| Category | Hard Drive (NVMe/SSD/HDD) |
| SKU | M474A2G43BB2-CWE |
| Part Number | M474A2G43BB2-CWE |
| Condition | New |
| Capacity | 16GB |
| Form Factor | 260-pin SODIMM |
| Speed | 3200MHz |
| Manufacturer Part Number | M474A2G43BB2-CWE |
| Memory Type | DDR4 ECC SODIMM |
| Capacity | 16GB |
| Speed | 3200MHz (PC4-25600) |
| Interface | 260-pin SODIMM |
| ECC | Yes — Error-Correcting Code (unbuffered ECC) |
| Registered / Buffered | Unbuffered (UDIMM/ECC SODIMM) |
| Operating Voltage | 1.2V |
| CAS Latency | CL22 |
| Module Organization | 2Gx72 |
| Ranks | Dual Rank |
| Data Width | 72-bit (64-bit data + 8-bit ECC) |
| Die Manufacturer | Samsung |
| Form Factor | SODIMM |
| Generation | DDR4 |
| Operating Temperature | 0°C to 85°C |
| RoHS Compliant | Yes |
the Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module (M474A2G43BB2-CWE) suits enterprise data-center storage tiers — all-flash arrays, hyperconverged storage pools (vSAN, Ceph), database backends, and high-throughput backup repositories. It is supported by major server platforms.
Key specifications for the Samsung 16GB DDR4 3200MHz ECC SODIMM Memory Module (M474A2G43BB2-CWE): new condition; brand Samsung; module type DDR4 ECC SODIMM; capacity 16GB; speed 3200MHz; voltage 1.2V; form factor 260-pin SODIMM. Manufacturer part number M474A2G43BB2-CWE. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.