Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM

Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM

Brand: Samsung | Category: Memory (RAM)

SKU: SAM-M321RAJA0MB0-CWM | Part #: M321RAJA0MB0-CWM | MPN: M321RAJA0MB0-CWM

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About the Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM

Built for Intel Xeon Scalable (Sapphire Rapids+) and AMD EPYC (Genoa+) server platforms, the Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM delivers mission-critical memory performance for demanding enterprise workloads. This quad-rank, registered DIMM combines high capacity with advanced error correction, making it an essential component for data centre architects and IT infrastructure teams deploying next-generation server clusters. Samsung's engineering ensures maximum uptime and data integrity across virtualised environments, high-performance computing applications, and large-scale database operations.

The M321RAJA0MB0-CWM operates at 5600 MT/s with integrated On-Die ECC (ODECC) plus host-level ECC support, providing dual-layer error detection and correction for mission-critical systems. Its low-profile 31.25mm form factor fits standard server chassis without thermal management compromises, while the 1.1V operating voltage aligns with JEDEC DDR5 RDIMM standards for broad platform compatibility. Enterprise IT procurement teams will appreciate the extensive validation across Intel and AMD Xeon platforms, ensuring reliable multi-node deployments from day one.

Key Specifications

  • Manufacturer: Samsung
  • Capacity: 128GB
  • Memory Type: DDR5 SDRAM
  • Speed: 5600 MT/s (DDR5-5600)
  • Form Factor: RDIMM (Registered / Buffered DIMM)
  • Configuration: 4Rx4 (Quad Rank), 288-pin, x4 die
  • Error Correction: On-Die ECC (ODECC) + host ECC
  • CAS Latency: 46
  • Operating Voltage: 1.1V
  • Module Height: 31.25mm (low-profile)
  • Part Number: M321RAJA0MB0-CWM

For enterprise server deployments requiring maximum reliability and performance, contact Omnixon Global to request a quotation on the Samsung DDR5-5600 RDIMM.

Technical Specifications

BrandSamsung
CategoryMemory (RAM)
SKUSAM-M321RAJA0MB0-CWM
Part NumberM321RAJA0MB0-CWM
ConditionNew
Capacity128GB
Form Factor288-pin DIMM
Speed5600 MT/s
Manufacturer Part NumberM321RAJA0MB0-CWM
Memory TypeDDR5 SDRAM
Form FactorRDIMM (Registered / Buffered DIMM)
Capacity128GB
Speed5600 MT/s (DDR5-5600)
Pin Count288-pin
Ranks4Rx4 (Quad Rank)
Data Width72-bit (64-bit data + 8-bit ECC)
Die Configurationx4
Operating Voltage1.1V
ECC SupportYes – On-Die ECC (ODECC) + host ECC
Error CorrectionOn-Die ECC (ODECC)
CAS Latency46
Module Height31.25mm (low-profile RDIMM)
Operating Temperature0°C to 85°C
JEDEC ComplianceJEDEC DDR5 RDIMM standard
Compatible CPU PlatformsIntel Xeon Scalable (Sapphire Rapids+), AMD EPYC (Genoa+)
ApplicationServer / Enterprise Workstation

Frequently Asked Questions about Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM

What does the Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM do?

The Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM is enterprise 288-pin DIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.

What are the headline specs of the Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM?

Key specifications for the Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM: capacity 128GB; form factor 288-pin DIMM; new condition; capacity 128GB; speed 5600MHz; type RDIMM (ECC Registered); ranks 2Rx4; voltage 1.1V; form factor 288-pin DIMM. Manufacturer part number M321RAJA0MB0-CWM. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.

Is the Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM compatible with my infrastructure?

The Samsung 128GB DDR5-5600 RDIMM M321RAJA0MB0-CWM fits 288-pin DIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.