Micron 128GB DDR5-5600 RDIMM MTC40F2047S1RC56BB2

Brand: Micron | Category: Memory (RAM)

SKU: MIC-MTC40F2047S1RC56BB2 | Part #: MTC40F2047S1RC56BB2 | MPN: MTC40F2047S1RC56BB2

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The Micron 128GB DDR5-5600 RDIMM MTC40F2047S1RC56BB2 operates at CAS Latency 46 with a lean 1.1V operating voltage—a combination that defines performance in latency-sensitive infrastructures. For infrastructure teams managing high-frequency trading platforms, in-memory databases, or real-time analytics clusters, these specifications represent the floor of acceptable performance rather than premium positioning. The voltage envelope matters because it directly affects power budgeting in dense server configurations, and the CL46 timing sits in the practical middle ground where Micron has optimized frequency and latency without sacrificing stability across enterprise deployments.

This is a 2Rx4 configuration delivering 128GB per DIMM, built on DDR5 technology at 5600 MT/s. The Micron MTC40F2047S1RC56BB2 is an RDIMM—registered memory—which means it introduces a register layer between the memory controller and the DRAM arrays themselves. That register reduces loading on the memory bus, allowing systems to scale to higher channel density without degradation. The 8G x4 component configuration and x80 bus width support the dual-rank architecture that enterprise sysadmins and storage architects rely on when building out 2-socket or 4-socket systems that demand both capacity and throughput. The part number MTC40F2047S1RC56BB2 includes full ECC support, which is non-negotiable for any production data-centre environment where bit errors can corrupt transaction records or model weights.

Micron's implementation here balances frequency headroom with thermal stability. At 5600 MT/s, you're operating well within the envelope of modern EPYC, Xeon, and next-generation server platforms. The 1.1V nominal voltage is conservative by design—it leaves margin for voltage tolerances across power distribution networks and keeps DRAM junction temperatures predictable across multi-year deployment windows. Data-centre infrastructure teams have learned that overprovisioning voltage for marginal frequency gains turns into reliability problems at scale. This RDIMM strikes that balance. The CAS Latency of 46 cycles reflects the inherent trade-off in DDR5 architecture: higher capacity per die, deeper pipelines, but predictable latency for the workloads that matter. Applications running Redis, PostgreSQL with heavy indexing, or NVIDIA H100 inference clusters with on-GPU caching rarely stall on a 46-cycle memory reference; the bottleneck sits elsewhere.

Deployment scenarios for the Micron MTC40F2047S1RC56BB2 span virtualization hosts running hundreds of VMs, Kubernetes control planes with etcd backed by fast persistent memory, GPU-accelerated training clusters where host RAM serves as model staging, and traditional database servers handling OLTP workloads. A storage architect building out a SAN metadata cluster would choose this RDIMM for predictable latency and capacity in a 2-socket node. A network engineer provisioning a new-generation switch fabric or load balancer would rely on RDIMMs of this specification to handle packet buffering and session state. The registered design is critical in these roles because it ensures that adding a second DIMM per channel doesn't force you to de-rate the memory speed or increase voltage—a common pain point with UDIMMs in larger configurations.

Omnixon Global sources and stocks the Micron MTC40F2047S1RC56BB2 for enterprises, data-centre operators, and system integrators throughout the GCC region, Asia, and Europe. We understand the procurement complexity of qualified memory in production environments: lead times, compatibility validation, and the need for genuine, warrantied components. If your infrastructure roadmap includes DDR5 RDIMM deployments, we invite you to submit a detailed RFQ specifying your platform, socket count, and timeline. Our team in Dubai holds inventory and maintains direct relationships with Micron to ensure you receive genuine MTC40F2047S1RC56BB2 units with full documentation and support.

Performance and Deployment Specifications

• 128GB capacity per DIMM in 2Rx4 rank configuration, enabling dense multi-socket memory builds without controller overload
• DDR5-5600 MT/s frequency with CAS Latency 46 and 1.1V nominal voltage—optimized for latency-critical workloads in trading, analytics, and database environments
• Full ECC support prevents silent data corruption in production; RDIMM register reduces bus loading for stable operation at scale
• 8G x4 component configuration with x80 bus width supports enterprise server platforms from AMD EPYC 7004-series, Intel Xeon Scalable 4th-gen, and later
• Thermal characteristics engineered for typical data-centre ambient (18–27°C) without requiring exotic cooling; power envelope remains predictable across multi-year lifecycles
• Registered DIMM design mandatory for systems with four or more memory channels per socket, preventing frequency de-rating or voltage margin loss
• Direct compatibility with HPE ProLiant Gen11, Dell PowerEdge XE9680, and Lenovo ThinkSystem SR680 V3 platforms commonly deployed in AI labs and hyperscale environments