Brand: Micron | Category: Memory (RAM)
SKU: MT60B6G32HB-48B:A | Part #: MT60B6G32HB-48B:A | MPN: MT60B6G32HB-48B:A
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The Micron HBM3E 12-Hi 48GB (MT60B6G32HB-48B:A) represents Micron's most advanced High Bandwidth Memory implementation, built on the HBM3E standard and featuring a 12-layer die stack that delivers a substantial leap in capacity and bandwidth over previous HBM generations. The architecture integrates 12 DRAM dies connected through through-silicon vias (TSVs) and micro-bumps, enabling a 1024-bit memory interface per stack that achieves exceptional data throughput while maintaining a compact silicon footprint suited for advanced packaging alongside compute dies in AI accelerator and HPC modules.
With 48GB of capacity per stack, this device addresses the growing memory demands of large-scale AI model inference and training, where insufficient memory capacity forces costly model partitioning or limits batch sizes. The HBM3E interface operates at elevated data rates compared to HBM3, and the 12-Hi stack configuration yields bandwidth figures that far exceed what is achievable with GDDR or traditional DDR5 DIMM solutions at equivalent power envelopes. Error Correcting Code (ECC) support is integrated across the stack, a mandatory attribute for enterprise-grade and mission-critical AI compute deployments where data integrity cannot be compromised.
The Micron HBM3E 12-Hi 48GB is engineered for direct integration by system and accelerator card manufacturers building next-generation AI training platforms, scientific simulation engines, and high-performance inference appliances. Its combination of raw bandwidth, high capacity, power efficiency per bit, and silicon-proven reliability positions it as a foundational memory component in datacenter GPU, NPU, and custom ASIC designs targeting demanding enterprise AI, machine learning, and data-intensive analytics workloads across UAE, GCC, EMEA, and APAC datacenter deployments.
| Manufacturer | Micron |
| Manufacturer Part Number | MT60B6G32HB-48B:A |
| Product Family | HBM3E |
| Memory Type | HBM3E (High Bandwidth Memory 3E) |
| Capacity per Stack | 48 GB |
| Stack Configuration | 12-Hi (12-layer die stack) |
| Interface Width | 1024-bit per stack |
| Memory Interface Standard | HBM3E (JEDEC JESD235) |
| ECC Support | Yes, on-die ECC |
| Die Interconnect Technology | Through-Silicon Via (TSV) with micro-bump bonding |
| Packaging | HBM stack for 2.5D/3D advanced packaging (interposer-based integration) |
| Form Factor | KGD (Known Good Die) stack |
| Operating Temperature Range | 0°C to 95°C junction temperature (typical enterprise operating range; refer to datasheet for full TCASE/TJ specifications) |
| Voltage | 1.2V VDD (nominal; refer to Micron datasheet for full power rail specifications) |
| Target Application | AI accelerators, HPC, GPU memory, custom ASIC / NPU designs |
| Pseudo Channel Architecture | Yes, supports pseudo-channel mode for improved command efficiency |
| Density per Die | 4 GB per DRAM die (12 dies × 4 GB) |
| Compliance | JEDEC HBM3E standard (JESD235) |
Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.
| Brand | Micron |
| Category | Memory (RAM) |
| SKU | MT60B6G32HB-48B:A |
| Part Number | MT60B6G32HB-48B:A |
| Condition | New |
| Manufacturer Part Number | MT60B6G32HB-48B:A |
| Product Family | HBM3E |
| Memory Type | HBM3E (High Bandwidth Memory 3E) |
| Capacity per Stack | 48 GB |
| Stack Configuration | 12-Hi (12-layer die stack) |
| Interface Width | 1024-bit per stack |
| Memory Interface Standard | HBM3E (JEDEC JESD235) |
| ECC Support | Yes, on-die ECC |
| Die Interconnect Technology | Through-Silicon Via (TSV) with micro-bump bonding |
| Packaging | HBM stack for 2.5D/3D advanced packaging (interposer-based integration) |
| Form Factor | KGD (Known Good Die) stack |
| Operating Temperature Range | 0°C to 95°C junction temperature (typical enterprise operating range; refer to datasheet for full TCASE/TJ specifications) |
| Voltage | 1.2V VDD (nominal; refer to Micron datasheet for full power rail specifications) |
| Target Application | AI accelerators, HPC, GPU memory, custom ASIC / NPU designs |
| Pseudo Channel Architecture | Yes, supports pseudo-channel mode for improved command efficiency |
| Density per Die | 4 GB per DRAM die (12 dies × 4 GB) |
| Compliance | JEDEC HBM3E standard (JESD235) |
Part number MT60B6G32HB-48B:A is qualified for Micron servers that list compatible memory in their QVL. We verify QVL match before quoting — share your server model in the RFQ and our pre-sales engineers confirm fit, recommended population pattern, and total capacity supported.
Full manufacturer support (typically 3 years, RDIMM/LRDIMM SKUs often lifetime against manufacturing defects). All product is sourced through distribution so support registers cleanly under your company name.
Submit the RFQ form on this page with your quantity and destination country. Our pre-sales team responds with a vendor-confirmed quote, availability, and matching server-QVL confirmation if needed.