Micron G9 UFS 4.1 512GB

The Micron G9 UFS 4.1 512GB (MT128GAOSD5HIAAT-AAT) is a ninth-generation Universal Flash Storage device built on Micron's advanced 232-layer 3D NAND technology. Conforming to the JEDEC UFS 4.1 standard, it operates over a high-speed M-PHY 5.0 physical layer with HS-GEAR5 signaling, delivering sequential read throughput of up to 4,200 MB/s and sequential write throughput of up to 2,800 MB/s across a dual-lane interface. The device presents 512 GB of managed NAND storage in a compact 11.5 mm × 13 mm × 1.0 mm JEDEC-standard package, making it suitable for integration into space-constrained embedded and mobile-class compute platforms.

Designed for sustained enterprise and industrial operation, the G9 UFS 4.1 leverages Micron's on-die ECC and advanced wear-leveling algorithms to maintain data integrity across the full rated temperature range of 0 °C to 70 °C (commercial) or the extended –25 °C to 85 °C range for high-temperature variants. The UFS 4.1 command queue depth of 32 (per LU) and support for Host Performance Booster (HPB) 2.0 reduce read latency in random-access workloads, while Write Booster (WB) and Refresh operations extend endurance and data retention in write-intensive deployments.

As a component-grade managed flash solution, the Micron G9 UFS 4.1 512GB targets system integrators and enterprise hardware manufacturers building next-generation edge AI inference platforms, industrial gateways, ruggedized mobile workstations, and high-density embedded servers. Omnixon Global supplies this part to enterprise buyers across the UAE, GCC, EMEA, and APAC regions, supporting procurement pipelines for volume builds and single-unit qualification samples alike.

Ideal for

• Edge AI inference nodes requiring high sequential read bandwidth for model loading and activation data streaming
• Industrial IoT gateways and embedded controllers demanding sustained write endurance across extended temperature ranges
• Ruggedized mobile workstations and handheld enterprise terminals where compact form factor and high throughput are both critical
• 5G network equipment and base-band unit storage subsystems requiring low-latency random I/O under continuous operation
• embedded server and compute module design-ins where managed NAND with on-die ECC simplifies system-level reliability qualification
• High-density thin-client and digital signage appliances needing 512 GB of fast managed storage in a minimal PCB footprint

Technical specifications

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.