Brand: Samsung | Category: Memory (RAM)
SKU: M321R6GA0P82-CCP | Part #: M321R6GA0P82-CCP
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The Samsung DDR5 48GB RDIMM Server Memory Module M321R6GA0P82-CCP 4800MHz ECC from Samsung is enterprise-grade Memory (RAM) hardware built for data centers. Samsung 48GB DDR5 RDIMM (M321R6GA0P82-CCP) is an enterprise-grade registered ECC server memory module designed for high-density, high-bandwidth data centre workloads. Operating at 4800MT/s, it delivers superior performance for AI/ML inference, in-memory databases, and cloud-native applications. Ideal for enterprise IT teams, hyperscalers, and GCC data centre operators upgrading to next-generation DDR5 server platforms. Available in brand new condition. Samsung memory (ram) products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | M321R6GA0P82-CCP |
| Part Number | M321R6GA0P82-CCP |
| Condition | New |
| Product Line | Samsung Server DRAM DDR5 |
| Module Type | RDIMM (Registered DIMM) |
| RoHS Compliance | RoHS 2.0 Compliant |
| Memory Technology | DDR5 SDRAM |
| Capacity per Module | 48 GB |
| Speed Rating | DDR5-4800 (PC5-38400) |
| Transfer Rate | 4800 MT/s |
| Peak Bandwidth | ~38.4 GB/s (theoretical per module) |
| Data Bus Width | 64-bit + 8-bit ECC (72-bit total) |
| Sub-Channel Architecture | 2x 32-bit independent sub-channels per DIMM |
| Rank Configuration | 6Rx8 (6 Ranks, x8 DRAM organisation) |
| Primary Timings (CL-tRCD-tRP) | 40-39-39 @ 4800 MT/s |
| Burst Length | BL16 (BC8 supported) |
| ECC Support | Yes — On-Die ECC + System-Level ECC (x72 ECC) |
| Error Correction | Single-bit error correction, Multi-bit error detection (SECDED) |
| On-Die ECC | Yes (DRAM-internal, corrects errors per die before propagation) |
| Form Factor | 288-pin DDR5 RDIMM |
| Module Dimensions | 133.35mm x 31.25mm (Standard RDIMM) |
| PCB Layers | 10-layer PCB |
| Heat Spreader | No (bare module, server chassis airflow assumed) |
| Operating Voltage (VDD) | 1.1V |
| I/O Voltage (VDDQ) | 1.1V |
| PMIC | Integrated On-DIMM Power Management IC (DDR5 PMIC) |
| Typical Power Consumption | ~7–9W per module at full load (DDR5-4800) |
| Operating Temperature | 0°C to 85°C (Extended Temp: A-temp variant dependent on SKU suffix) |
| Storage Temperature | -40°C to +95°C |
| Operating Humidity | 5% to 95% RH (non-condensing) |
| MTBF | >20,000,000 hours (estimated, per Samsung DRAM reliability data) |
| Post Package Repair (PPR) | Supported (Hard PPR and Soft PPR) |
| SPD Version | SPD 5.0 (DDR5 EEPROM) |
| Temperature Monitoring | Yes — integrated thermal sensor with JEDEC TS spec |
| Interface Standard | JEDEC JESD79-5 DDR5 |
| Compatible CPU Platforms | Intel Xeon Scalable 4th Gen (Sapphire Rapids); AMD EPYC 9004 Series (Genoa, Genoa-X, Bergamo) |
| Compatible Server Platforms | HPE ProLiant DL380/DL360/DL560 Gen11; Dell PowerEdge R760/R860/R960; Lenovo ThinkSystem SR650/SR850 V3; Supermicro H13 Series; Inspur NF5280M7 |
| Operating System Support | RHEL, SLES, Ubuntu Server LTS, VMware vSphere 8.x, Windows Server 2022, OpenShift, Kubernetes |
| Standards Compliance | JEDEC JESD79-5 DDR5, RoHS 2.0, REACH |
| OEM Certification | Samsung OEM-qualified; validated by major server OEMs (HPE, Dell, Lenovo, Supermicro) |