Brand: Samsung | Category: Memory (RAM)
SKU: SAM-M393A2K43DB3-CWE | Part #: M393A2K43DB3-CWE | MPN: M393A2K43DB3-CWE
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The Samsung 16GB DDR4-3200 RDIMM M393A2K43DB3-CWE from Samsung is enterprise-grade Memory (RAM) hardware built for data centers. It features 16GB capacity, 288-pin RDIMM form factor, 3200 MT/s speed. A 16GB DDR4-3200 RDIMM memory module from Samsung, designed for server platforms. It offers high performance and reliability for enterprise workloads. Available in brand new condition. Samsung memory (ram) products are trusted by enterprises and data centers worldwide. Available from Omnixon Global. Contact our sales team to request a quote.
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAM-M393A2K43DB3-CWE |
| Part Number | M393A2K43DB3-CWE |
| Condition | New |
| Capacity | 16GB |
| Form Factor | 288-pin RDIMM |
| Speed | 3200 MT/s |
| Capacity | 16GB |
| Memory Type | DDR4 |
| Memory Speed | 3200 MT/s |
| ECC | Yes |
| DIMM Type | RDIMM |
| Rank | 2Rx8 |
| Memory Voltage | 1.2V |
| Memory Form Factor | RDIMM |
| Module Name | PC4-25600R |
| Organization | x8 |
| CAS Latency | CL22 |
The Samsung 16GB DDR4-3200 RDIMM M393A2K43DB3-CWE is enterprise 288-pin RDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
Key specifications for the Samsung 16GB DDR4-3200 RDIMM M393A2K43DB3-CWE: capacity 16GB; form factor 288-pin RDIMM; new condition; capacity 16GB; memory type DDR4; speed 3200MHz; ecc Yes; dimm type RDIMM; rank 2Rx8. Manufacturer part number M393A2K43DB3-CWE. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.
The Samsung 16GB DDR4-3200 RDIMM M393A2K43DB3-CWE fits 288-pin RDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.