Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE
Brand: Samsung | Category: Memory (RAM)
SKU: SAM-M393A4K40DB3-CWE | Part #: M393A4K40DB3-CWE | MPN: M393A4K40DB3-CWE
Contact for Pricing — Request a Quote
About the Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE
About Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE
The Samsung M393A4K40DB3-CWE is a high-performance 32GB DDR4 Registered DIMM (RDIMM) memory module engineered for enterprise servers and data centers. Operating at a speed of 3200MHz, this module provides the bandwidth necessary for demanding applications, including virtualization, cloud computing, and in-memory databases. Its ECC (Error-Correcting Code) functionality ensures data integrity by detecting and correcting memory errors, which is critical for maintaining system stability and preventing data corruption in mission-critical environments.
This dual-rank (2Rx4) memory module is built to JEDEC standards and operates at a standard voltage of 1.2V, contributing to lower power consumption and reduced thermal output in server racks. The 288-pin RDIMM form factor is compatible with a wide range of server platforms that support DDR4 memory. Samsung's memory modules are known for their reliability and performance, making the M393A4K40DB3-CWE a dependable choice for upgrading server memory capacity and enhancing overall system responsiveness.
As a registered DIMM, the M393A4K40DB3-CWE includes a register on the module that buffers the command and address signals between the memory controller and the DRAM chips. This buffering reduces the electrical load on the memory controller, allowing for more memory modules to be installed per channel and enabling higher memory capacities within a server. This makes it an ideal solution for scaling memory in growing enterprise environments where performance and reliability are paramount.
Technical Specifications
| Specification | Value |
|---|---|
| Capacity | 32GB |
| Memory Type | DDR4 |
| ECC | ECC |
| DIMM Type | RDIMM |
| Rank | 2Rx4 |
| Speed | 3200MHz |
| Voltage | 1.2V |
| Form Factor | 288-pin RDIMM |
| CAS Latency | CL22 |
Key Features
- Capacity: 32GB
- Memory Type: DDR4
- ECC: ECC
- DIMM Type: RDIMM
- Rank: 2Rx4
- Speed: 3200MHz
Ideal Use Cases
- Enterprise IT infrastructure
- Data center modernization
- Cloud and hybrid deployments
- Business continuity solutions
- Performance optimization
- Scalable computing solutions
Technical Specifications
| Brand | Samsung |
| Category | Memory (RAM) |
| SKU | SAM-M393A4K40DB3-CWE |
| Part Number | M393A4K40DB3-CWE |
| Condition | New |
| Capacity | 32GB |
| Form Factor | 288-pin RDIMM |
| Speed | 3200 MT/s |
| Capacity | 32GB |
| Memory Type | DDR4 |
| ECC | ECC |
| DIMM Type | RDIMM |
| Rank | 2Rx4 |
| Memory Speed | 3200 MT/s |
| Memory Voltage | 1.2V |
| Memory Form Factor | RDIMM |
| CAS Latency | CL22 |
Frequently Asked Questions about Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE
What does the Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE do?
The Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE is enterprise 288-pin RDIMM memory designed for ECC-protected workloads — virtualization hosts, database servers, analytics platforms, and AI training rigs. Samsung validates this module against major server vendor compatibility matrices.
What are the headline specs of the Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE?
Key specifications for the Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE: capacity 32GB; form factor 288-pin RDIMM; new condition; capacity 32GB; memory type DDR4; ecc ECC; dimm type RDIMM; rank 2Rx4; speed 3200MHz. Manufacturer part number M393A4K40DB3-CWE. For the full datasheet with electrical, environmental, and compliance details, contact our pre-sales engineering team.
Is the Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE compatible with my infrastructure?
The Samsung 32GB DDR4-3200 RDIMM M393A4K40DB3-CWE fits 288-pin RDIMM memory slots and is compatible with major server platforms validated by Samsung. Server vendor IPL/HCL compatibility (Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro) is checked at quote time so you don't risk a memory-channel mismatch.