SK Hynix LPDDR5X 8GB (Mobile, 1z nm)

SK Hynix LPDDR5X 8GB (Mobile, 1z nm)

Brand: SK Hynix | Category: Memory (RAM)

SKU: H58G56AK8BX067 | Part #: H58G56AK8BX067 | MPN: H58G56AK8BX067

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About the SK Hynix LPDDR5X 8GB (Mobile, 1z nm)

The SK Hynix LPDDR5X 8GB (1z nm) is a high-performance low-power mobile DRAM module built on SK Hynix's advanced 1z nanometer process node. LPDDR5X represents the extended specification of the LPDDR5 standard, delivering higher data transfer rates and improved power efficiency compared to its predecessor. The 1z nm fabrication node enables tighter cell pitch and reduced die area, contributing to improved yield, lower operating voltage, and enhanced signal integrity suitable for thermally constrained mobile and embedded system environments.

Operating at data rates reaching up to 8533 Mbps per pin, this module is engineered to meet the memory bandwidth demands of modern application processors found in flagship smartphones, tablets, and mobile computing platforms. The LPDDR5X specification introduces higher clock frequencies alongside refined Command Bus Training and Data Bus Inversion mechanisms, reducing susceptibility to noise and improving reliability under sustained high-throughput conditions. The device supports a wide temperature operating range and incorporates on-die ECC (Error Correcting Code), enhancing data integrity without requiring external ECC infrastructure.

With part number H58G56AK8BX067, this 8GB component is positioned for integration into enterprise-adjacent mobile endpoints, AI edge inference platforms, and embedded computing modules where memory bandwidth and power envelope are simultaneously critical constraints. Its compatibility with leading mobile SoC platforms from Qualcomm, MediaTek, Samsung, and Apple ecosystem partners makes it a versatile component for system builders and ODM integrators supplying enterprise mobile fleets, rugged handhelds, and AI-accelerated edge devices to markets across UAE, GCC, EMEA, and APAC.

Ideal for

  • Enterprise flagship smartphones and mobile workstations requiring high sustained memory bandwidth for multitasking and on-device AI inference workloads
  • AI edge inference modules and NPU-equipped embedded platforms where low-power high-throughput DRAM is critical to meeting real-time latency targets
  • Rugged mobile computing devices deployed in field service, logistics, and industrial IoT environments demanding reliable operation across extended temperature ranges
  • and ODM system integration for enterprise tablet and thin-client platforms targeting corporate mobility fleets in regulated industries
  • Mobile robotics and autonomous systems requiring compact, power-efficient DRAM with on-die ECC for functional safety-adjacent applications
  • High-performance embedded computing boards and system-on-module (SOM) designs targeting edge AI, machine vision, and connected infrastructure applications

Technical specifications

ManufacturerSK Hynix
Manufacturer Part NumberH58G56AK8BX067
Memory TypeLPDDR5X
Capacity8GB
Process Node1z nm
Max Data Rate8533 Mbps per pin
InterfaceLow Power Double Data Rate 5X (LPDDR5X)
Bus Width64-bit (x64)
Die Organizationx16 per die
Supply Voltage (VDD2)1.05V
Supply Voltage (VDDQ)0.5V
On-Die ECCSupported
Operating Temperature0°C to 85°C
Package TypeFBGA (Fine-pitch Ball Grid Array)
Form FactorMobile / Embedded (component-level)
Refresh TypeAll-Bank Refresh, Per-Bank Refresh
Data Bus Inversion (DBI)Supported (Read and Write)
Command Bus TrainingSupported
SegmentMobile / Consumer DRAM
RoHS ComplianceRoHS compliant

Available from Omnixon Global. Submit an RFQ and our team will confirm configuration and availability for your order.

Technical Specifications

BrandSK Hynix
CategoryMemory (RAM)
SKUH58G56AK8BX067
Part NumberH58G56AK8BX067
ConditionNew
Manufacturer Part NumberH58G56AK8BX067
Memory TypeLPDDR5X
Capacity8GB
Process Node1z nm
Max Data Rate8533 Mbps per pin
InterfaceLow Power Double Data Rate 5X (LPDDR5X)
Bus Width64-bit (x64)
Die Organizationx16 per die
Supply Voltage (VDD2)1.05V
Supply Voltage (VDDQ)0.5V
On-Die ECCSupported
Operating Temperature0°C to 85°C
Package TypeFBGA (Fine-pitch Ball Grid Array)
Form FactorMobile / Embedded (component-level)
Refresh TypeAll-Bank Refresh, Per-Bank Refresh
Data Bus Inversion (DBI)Supported (Read and Write)
Command Bus TrainingSupported
SegmentMobile / Consumer DRAM
RoHS ComplianceRoHS compliant

Frequently Asked Questions about SK Hynix LPDDR5X 8GB (Mobile, 1z nm)

Is the SK Hynix LPDDR5X 8GB (Mobile, 1z nm) compatible with my server?

Part number H58G56AK8BX067 is qualified for SK Hynix servers that list compatible memory in their QVL. We verify QVL match before quoting — share your server model in the RFQ and our pre-sales engineers confirm fit, recommended population pattern, and total capacity supported.

What support applies to this memory module?

Full manufacturer support (typically 3 years, RDIMM/LRDIMM SKUs often lifetime against manufacturing defects). All product is sourced through distribution so support registers cleanly under your company name.

How do I request a quote?

Submit the RFQ form on this page with your quantity and destination country. Our pre-sales team responds with a vendor-confirmed quote, availability, and matching server-QVL confirmation if needed.